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Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface
Wang, Liancheng; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong; Wang, L.(wanglc@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:2Pages:24009
AbstractLow resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes(VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability.
metadata_83中科院半导体照明研发中心
KeywordGallium Nitride Leakage Currents Light Emission Light Emitting Diodes Metallizing Polarization Testing Water Analysis
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23150
Collection中科院半导体照明研发中心
Corresponding AuthorWang, L.(wanglc@semi.ac.cn)
Recommended Citation
GB/T 7714
Wang, Liancheng,Guo, Enqing,Liu, Zhiqiang,et al. Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface[J]. Journal of Semiconductors,2011,32(2):24009.
APA Wang, Liancheng,Guo, Enqing,Liu, Zhiqiang,Yi, Xiaoyan,Wang, Guohong,&Wang, L..(2011).Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface.Journal of Semiconductors,32(2),24009.
MLA Wang, Liancheng,et al."Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface".Journal of Semiconductors 32.2(2011):24009.
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