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Influence of growth conditions on the V-defects in InGaN/GaN MQWs
Ji, Panfeng; Liu, Naixin; Wei, Xuecheng; Liu, Zhe; Lu, Hongxi; Wang, Junxi; Li, Jinmin; Ji, P.(jipanfeng@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:10Pages:103001
AbstractThe influence of the growth temperature, TMIn/TEGa and V/III ratio on the V-defects of InGaN/GaN multi-quantum wells(MQWs) has been investigated and discussed. When the TMIn flow increases from180 to200 sccm, the density of V-defects increases from2.72×1018 to5.24×1018 cm-2, and the V-defect width and depth increase too. The density also increases with the growth temperature. The densities are2.05×108,2.72×1018 and4.23×108 cm-2, corresponding to a growth temperature of748,753 and758°C respectively. When the NH3 flows are5000,6600 and8000 sccm, the densities of the V-defects of these samples are6.34×1018,2.72×1018 and4.13×1018 cm-2, respectively. A proper V/III ratio is needed to achieve step flow growth mode. We get the best quality of InGaN/GaN MQWs at a growth temperature of753°C TMIn flow at180 sccm, NH3 flow at6600 sccm, a flatter surface and less V-defects density. The depths of these V-defects are from10 to30 nm, and the widths are from100 to200 nm. In order to suppress the influence of V-defects on reverse current and electro-static discharge of LEDs, it is essential to grow thicker p-GaN to fill the V-defects.?2011 Chinese Institute of Electronics.
metadata_83中科院半导体照明研发中心
KeywordGallium Nitride Growth Temperature Semiconductor Quantum Wells Surface Defects
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23148
Collection中科院半导体照明研发中心
Corresponding AuthorJi, P.(jipanfeng@semi.ac.cn)
Recommended Citation
GB/T 7714
Ji, Panfeng,Liu, Naixin,Wei, Xuecheng,et al. Influence of growth conditions on the V-defects in InGaN/GaN MQWs[J]. Journal of Semiconductors,2011,32(10):103001.
APA Ji, Panfeng.,Liu, Naixin.,Wei, Xuecheng.,Liu, Zhe.,Lu, Hongxi.,...&Ji, P..(2011).Influence of growth conditions on the V-defects in InGaN/GaN MQWs.Journal of Semiconductors,32(10),103001.
MLA Ji, Panfeng,et al."Influence of growth conditions on the V-defects in InGaN/GaN MQWs".Journal of Semiconductors 32.10(2011):103001.
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