| Optical and electrical characteristics of GaN vertical light emitting diode with current block layer | |
| Guo, Enqing; Liu, Zhiqiang; Wang, Liancheng; Yi, Xiaoyan; Wang, Guohong; Guo, E.(guoeq@semi.ac.cn) | |
| 2011 | |
| Source Publication | Journal of Semiconductors
 |
| ISSN | 16744926 |
| Volume | 32Issue:6Pages:64007 |
| Abstract | A GaN vertical light emitting diode(LED) with a current block layer(CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are40.6% and60.7% higher than that of vertical LEDs without a CBL at350 mA, respectively. The efficiencies of vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL drop to72%,78% and85.5% of their maximum efficiency at350 mA, respectively. Moreover, vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.?2011 Chinese Institute of Electronics. |
| metadata_83 | 中科院半导体照明研发中心 |
| Keyword | Drops Efficiency Electric Contactors Gallium Nitride Light Emission Ohmic Contacts Silica |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2012-06-14 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23147 |
| Collection | 中科院半导体照明研发中心 |
| Corresponding Author | Guo, E.(guoeq@semi.ac.cn) |
| Recommended Citation GB/T 7714 | Guo, Enqing,Liu, Zhiqiang,Wang, Liancheng,et al. Optical and electrical characteristics of GaN vertical light emitting diode with current block layer[J]. Journal of Semiconductors,2011,32(6):64007. |
| APA | Guo, Enqing,Liu, Zhiqiang,Wang, Liancheng,Yi, Xiaoyan,Wang, Guohong,&Guo, E..(2011).Optical and electrical characteristics of GaN vertical light emitting diode with current block layer.Journal of Semiconductors,32(6),64007. |
| MLA | Guo, Enqing,et al."Optical and electrical characteristics of GaN vertical light emitting diode with current block layer".Journal of Semiconductors 32.6(2011):64007. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012041.pdf（656KB） | 限制开放 | License | Application Full Text | |||
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