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Optical and electrical characteristics of GaN vertical light emitting diode with current block layer
Guo, Enqing; Liu, Zhiqiang; Wang, Liancheng; Yi, Xiaoyan; Wang, Guohong; Guo, E.(guoeq@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:6Pages:64007
AbstractA GaN vertical light emitting diode(LED) with a current block layer(CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are40.6% and60.7% higher than that of vertical LEDs without a CBL at350 mA, respectively. The efficiencies of vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL drop to72%,78% and85.5% of their maximum efficiency at350 mA, respectively. Moreover, vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.?2011 Chinese Institute of Electronics.
metadata_83中科院半导体照明研发中心
KeywordDrops Efficiency Electric Contactors Gallium Nitride Light Emission Ohmic Contacts Silica
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23147
Collection中科院半导体照明研发中心
Corresponding AuthorGuo, E.(guoeq@semi.ac.cn)
Recommended Citation
GB/T 7714
Guo, Enqing,Liu, Zhiqiang,Wang, Liancheng,et al. Optical and electrical characteristics of GaN vertical light emitting diode with current block layer[J]. Journal of Semiconductors,2011,32(6):64007.
APA Guo, Enqing,Liu, Zhiqiang,Wang, Liancheng,Yi, Xiaoyan,Wang, Guohong,&Guo, E..(2011).Optical and electrical characteristics of GaN vertical light emitting diode with current block layer.Journal of Semiconductors,32(6),64007.
MLA Guo, Enqing,et al."Optical and electrical characteristics of GaN vertical light emitting diode with current block layer".Journal of Semiconductors 32.6(2011):64007.
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