SEMI OpenIR  > 中科院半导体照明研发中心
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
Hu, Qiang; Wei, Tongbo; Duan, Ruifei; Yang, Jiankun; Huo, Ziqiang; Zeng, Yiping; Xu, Shu; Hu, Q.(huqiang@semi.ac.cn)
2011
Source PublicationMaterials Science in Semiconductor Processing
ISSN13698001
AbstractGaN freestanding substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. The morphologies of Ga-face and N-face of freestanding GaN substrate were analyzed by a variety of characterization techniques before and after etching in boiled KOH for1 min. The obtained characteristics of unetched GaN are strongly dependent on the growth polarity. The N-polar GaN layer has high free electron, impurity and point defect concentrations. In the layers grown on the(0001) Ga-polar side, these concentrations are very low. After etching, the Ga-polar GaN has identical properties to those of the unetched Ga-polar GaN layer. But the etched N-polar GaN has significant difference with unetched N-polar GaN layer in structure and optical properties. The etched N-polar GaN has a smaller(0002) DCXRD width(646″) than the unetched N-polar GaN(1351″). The optical quality of etched N-polar GaN is comparable with that of Ga-polar GaN, and the FWHMs of the D0X line of Ga-face and etched N-face are9.3 and12.8 meV, respectively. The LPP mode in the Raman spectra and FERB peak in PL spectra were used to analyze the free carrier concentration of two sides of etched and unetched freestanding GaN substrate.?2011 Elsevier Ltd. All rights reserved.
metadata_83中科院半导体照明研发中心
KeywordCarrier Concentration Etching Gallium Alloys Optical Properties Point Defects Raman Spectroscopy Semiconducting Gallium Compounds Vapor Phase Epitaxy Vapors
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23146
Collection中科院半导体照明研发中心
Corresponding AuthorHu, Q.(huqiang@semi.ac.cn)
Recommended Citation
GB/T 7714
Hu, Qiang,Wei, Tongbo,Duan, Ruifei,et al. Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy[J]. Materials Science in Semiconductor Processing,2011.
APA Hu, Qiang.,Wei, Tongbo.,Duan, Ruifei.,Yang, Jiankun.,Huo, Ziqiang.,...&Hu, Q..(2011).Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy.Materials Science in Semiconductor Processing.
MLA Hu, Qiang,et al."Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy".Materials Science in Semiconductor Processing (2011).
Files in This Item:
File Name/Size DocType Version Access License
2012038.pdf(594KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Hu, Qiang]'s Articles
[Wei, Tongbo]'s Articles
[Duan, Ruifei]'s Articles
Baidu academic
Similar articles in Baidu academic
[Hu, Qiang]'s Articles
[Wei, Tongbo]'s Articles
[Duan, Ruifei]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Hu, Qiang]'s Articles
[Wei, Tongbo]'s Articles
[Duan, Ruifei]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.