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Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer
Ji, Panfeng; Liu, Naixin; Wei, Tongbo; Liu, Zhe; Lu, Hongxi; Wang, Junxi; Li, Jinmin; Ji, P.(jipanfeng@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:11Pages:114006
AbstractWith an n-AlGaN(4 nm)/GaN(4 nm) superlattice(SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer, the efficiency droop of GaN-based LEDs has been improved. When the injection current is lower than100 mA, the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-AlGaN/GaN SL. However, as the injection current increases more than100 mA, the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL. The wall plug efficiency of an LED has the same trend as lumen efficiency. The improvement of the efficiency droop of LEDs with n-AlGaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities. The reverse current of LEDs at-5 V reverse voltage decreases from0.2568029 to0.0070543μA, and the electro-static discharge(ESD) pass yield of an LED at human body mode(HBM)-ESD impulses of2000 V increases from60% to90%.?2011 Chinese Institute of Electronics.
metadata_83中科院半导体照明研发中心
KeywordEfficiency Electrostatic Devices Electrostatic Discharge Superlattices Voltage Control
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23144
Collection中科院半导体照明研发中心
Corresponding AuthorJi, P.(jipanfeng@semi.ac.cn)
Recommended Citation
GB/T 7714
Ji, Panfeng,Liu, Naixin,Wei, Tongbo,et al. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer[J]. Journal of Semiconductors,2011,32(11):114006.
APA Ji, Panfeng.,Liu, Naixin.,Wei, Tongbo.,Liu, Zhe.,Lu, Hongxi.,...&Ji, P..(2011).Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer.Journal of Semiconductors,32(11),114006.
MLA Ji, Panfeng,et al."Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer".Journal of Semiconductors 32.11(2011):114006.
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