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Theoretical study of polarization-doped GaN-based light-emitting diodes
Zhang, L.; Ding, K.; Liu, N.X.; Wei, T.B.; Ji, X.L.; Ma, P.; Yan, J.C.; Wang, J.X.; Zeng, Y.P.; Li, J.M.; Zhang, L.(zhanglian07@semi.ac.cn)
2011
Source PublicationApplied Physics Letters
ISSN00036951
Volume98Issue:10Pages:101110
AbstractInsufficient hole injection is a major impediment to the luminescence efficiency of III-nitride light-emitting diodes(LEDs). In our previous work by Zhang[Appl. Phys. Lett.97,062103(2010)], high-density mobile three-dimensional hole gas is obtained in Mg-doped Al composition graded AlGaN layer with Al composition linearly decreasing from a certain value to0. In this paper, it is revealed by a theoretical study that the hole injection efficiency in blue-light GaN-based LEDs can be greatly enhanced by using this polarization-doped method. An increase in the electroluminescence intensity and the internal quantum efficiency in polarization-doped GaN-based LEDs is observed, in comparison with a conventional LED.?2011 American Institute of Physics.
metadata_83中科院半导体照明研发中心
KeywordElectron Injection Gallium Alloys Gallium Nitride Light Light Emission Organic Light Emitting Diodes(Oled) Polarization
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23143
Collection中科院半导体照明研发中心
Corresponding AuthorZhang, L.(zhanglian07@semi.ac.cn)
Recommended Citation
GB/T 7714
Zhang, L.,Ding, K.,Liu, N.X.,et al. Theoretical study of polarization-doped GaN-based light-emitting diodes[J]. Applied Physics Letters,2011,98(10):101110.
APA Zhang, L..,Ding, K..,Liu, N.X..,Wei, T.B..,Ji, X.L..,...&Zhang, L..(2011).Theoretical study of polarization-doped GaN-based light-emitting diodes.Applied Physics Letters,98(10),101110.
MLA Zhang, L.,et al."Theoretical study of polarization-doped GaN-based light-emitting diodes".Applied Physics Letters 98.10(2011):101110.
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