SEMI OpenIR  > 中科院半导体材料科学重点实验室
Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation
Tan, Hairen; You, Jingbi; Zhang, Shuguang; Gao, Hongli; Yin, Zhigang; Bai, Yiming; Zhang, Xiulan; Zhang, Xingwang; Qu, Sheng; Tan, H.(hrtan@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:10Pages:102002
AbstractThe calculation results of the surface plasmon(SP) energy and Purcell factor of ZnO/NiSi2 demonstrate the possibility of using NiSi2 to enhance the UV emission of ZnO by SP coupling. Experimentally, ZnO films were deposited on NiSi2 layers synthesized by ion implantation, and the roughness of the NiSi2 layers spans a large range from3 to38 nm, providing favorable conditions for investigating SP-mediated emission. An11-fold emission enhancement from the ZnO film on the roughest NiSi2 layer was obtained, which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.?2011 Chinese Institute of Electronics.
metadata_83中科院半导体材料科学重点实验室
KeywordMetallic Films Plasmons Silicides Zinc Oxide
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23141
Collection中科院半导体材料科学重点实验室
Corresponding AuthorTan, H.(hrtan@semi.ac.cn)
Recommended Citation
GB/T 7714
Tan, Hairen,You, Jingbi,Zhang, Shuguang,et al. Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation[J]. Journal of Semiconductors,2011,32(10):102002.
APA Tan, Hairen.,You, Jingbi.,Zhang, Shuguang.,Gao, Hongli.,Yin, Zhigang.,...&Tan, H..(2011).Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation.Journal of Semiconductors,32(10),102002.
MLA Tan, Hairen,et al."Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation".Journal of Semiconductors 32.10(2011):102002.
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