| Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy | |
| Jia, Caihong; Chen, Yonghai; Guo, Yan; Liu, Xianglin; Yang, Shaoyan; Zhang, Weifeng; Wang, Zhanguo; Chen, Y.(yhchen@semi.ac.cn) | |
| 2011 | |
| Source Publication | Nanoscale Research Letters
 |
| ISSN | 19317573 |
| Volume | 6Pages:1-5 |
| Abstract | X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset(VBO) and conduction band offset(CBO) are determined to be2.25±0.09 and0.15±0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.?2011 Jia et al. |
| metadata_83 | 中科院半导体材料科学重点实验室 |
| Keyword | Photons Valence Bands x Ray Photoelectron Spectroscopy |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2012-06-14 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23139 |
| Collection | 中科院半导体材料科学重点实验室 |
| Corresponding Author | Chen, Y.(yhchen@semi.ac.cn) |
| Recommended Citation GB/T 7714 | Jia, Caihong,Chen, Yonghai,Guo, Yan,et al. Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy[J]. Nanoscale Research Letters,2011,6:1-5. |
| APA | Jia, Caihong.,Chen, Yonghai.,Guo, Yan.,Liu, Xianglin.,Yang, Shaoyan.,...&Chen, Y..(2011).Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.Nanoscale Research Letters,6,1-5. |
| MLA | Jia, Caihong,et al."Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy".Nanoscale Research Letters 6(2011):1-5. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012139.pdf（288KB） | 限制开放 | License | Application Full Text | |||
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