| Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states | |
| Zhou, X.L.; Chen, Y.H.; Ye, X.L.; Xu, Bo; Wang, Z.G.; Zhou, X. L.(zhouxl06@semi.ac.cn) | |
| 2011 | |
| Source Publication | Journal of Applied Physics
 |
| ISSN | 00218979 |
| Volume | 109Issue:11Pages:113540 |
| Abstract | This paper presents detailed studies on the temperature dependent photoluminescence(PL) of excited states(ES) of self-assembled InAs/GaAs quantum dots. Two abnormal temperature dependent characteristics of ES have been observed: first is the strong broadening of PL linewidth with increasing temperature from15 to300 K. Second, the intensity ratio of ES to ground states(GS) increases with raising temperature under all measured excitation powers. Such peculiarities could be well explained by the thermal carrier exchange between GS and ES. Taking into account the GS-ES carrier exchange, an improved carrier equation model is adopted to describe the temperature dependence of intensity ratio of ES to GS. The temperature dependent carrier population of ES is further discussed based on the simulation results.?2011 American Institute of Physics. |
| metadata_83 | 中科院半导体材料科学重点实验室 |
| Keyword | Ground State Photoluminescence Quantum Efficiency Semiconductor Quantum Dots |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Date Available | 2012-06-14 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23136 |
| Collection | 中科院半导体材料科学重点实验室 |
| Corresponding Author | Zhou, X. L.(zhouxl06@semi.ac.cn) |
| Recommended Citation GB/T 7714 | Zhou, X.L.,Chen, Y.H.,Ye, X.L.,et al. Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states[J]. Journal of Applied Physics,2011,109(11):113540. |
| APA | Zhou, X.L.,Chen, Y.H.,Ye, X.L.,Xu, Bo,Wang, Z.G.,&Zhou, X. L..(2011).Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states.Journal of Applied Physics,109(11),113540. |
| MLA | Zhou, X.L.,et al."Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states".Journal of Applied Physics 109.11(2011):113540. |
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| Abnormal temperature（1616KB） | 限制开放 | License | Application Full Text | |||
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