SEMI OpenIR  > 中科院半导体材料科学重点实验室
Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states
Zhou, X.L.; Chen, Y.H.; Ye, X.L.; Xu, Bo; Wang, Z.G.; Zhou, X. L.(zhouxl06@semi.ac.cn)
2011
Source PublicationJournal of Applied Physics
ISSN00218979
Volume109Issue:11Pages:113540
AbstractThis paper presents detailed studies on the temperature dependent photoluminescence(PL) of excited states(ES) of self-assembled InAs/GaAs quantum dots. Two abnormal temperature dependent characteristics of ES have been observed: first is the strong broadening of PL linewidth with increasing temperature from15 to300 K. Second, the intensity ratio of ES to ground states(GS) increases with raising temperature under all measured excitation powers. Such peculiarities could be well explained by the thermal carrier exchange between GS and ES. Taking into account the GS-ES carrier exchange, an improved carrier equation model is adopted to describe the temperature dependence of intensity ratio of ES to GS. The temperature dependent carrier population of ES is further discussed based on the simulation results.?2011 American Institute of Physics.
metadata_83中科院半导体材料科学重点实验室
KeywordGround State Photoluminescence Quantum Efficiency Semiconductor Quantum Dots
Subject Area半导体材料
Indexed ByEI
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23136
Collection中科院半导体材料科学重点实验室
Corresponding AuthorZhou, X. L.(zhouxl06@semi.ac.cn)
Recommended Citation
GB/T 7714
Zhou, X.L.,Chen, Y.H.,Ye, X.L.,et al. Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states[J]. Journal of Applied Physics,2011,109(11):113540.
APA Zhou, X.L.,Chen, Y.H.,Ye, X.L.,Xu, Bo,Wang, Z.G.,&Zhou, X. L..(2011).Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states.Journal of Applied Physics,109(11),113540.
MLA Zhou, X.L.,et al."Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states".Journal of Applied Physics 109.11(2011):113540.
Files in This Item:
File Name/Size DocType Version Access License
Abnormal temperature(1616KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhou, X.L.]'s Articles
[Chen, Y.H.]'s Articles
[Ye, X.L.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhou, X.L.]'s Articles
[Chen, Y.H.]'s Articles
[Ye, X.L.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhou, X.L.]'s Articles
[Chen, Y.H.]'s Articles
[Ye, X.L.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.