SEMI OpenIR  > 中科院半导体材料科学重点实验室
Porous waveguide facilitated low divergence quantum cascade laser
Yin, Wen; Lu, Quanyong; Liu, Wanfeng; Zhang, Jinchuan; Wang, Lijun; Liu, Junqi; Li, Lu; Liu, Fengqi; Wang, Zhanguo; Liu, F.(fqliu@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:6Pages:64008
AbstractA quantum cascade laser with a porous waveguide structure emitting at4.5μm is reported. A branchlike porous structure filled with metal material was fabricated on both sides of the laser ridge by an electrochemical etching process. In contrast to the common ridge waveguide laser, devices with a porous structure give rather better beam quality. Utilizing this porous structure as a high-order mode absorber, the device exhibited fundamental transverse mode emission with a nearly diffraction limited far-field beam divergence angle of4.9°.?2011 Chinese Institute of Electronics.
metadata_83中科院半导体材料科学重点实验室
KeywordElectrochemical Etching Quantum Cascade Lasers
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23130
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLiu, F.(fqliu@semi.ac.cn)
Recommended Citation
GB/T 7714
Yin, Wen,Lu, Quanyong,Liu, Wanfeng,et al. Porous waveguide facilitated low divergence quantum cascade laser[J]. Journal of Semiconductors,2011,32(6):64008.
APA Yin, Wen.,Lu, Quanyong.,Liu, Wanfeng.,Zhang, Jinchuan.,Wang, Lijun.,...&Liu, F..(2011).Porous waveguide facilitated low divergence quantum cascade laser.Journal of Semiconductors,32(6),64008.
MLA Yin, Wen,et al."Porous waveguide facilitated low divergence quantum cascade laser".Journal of Semiconductors 32.6(2011):64008.
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