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Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth
Shao, Yongbo; Zhao, Lingjuan; Yu, Hongyan; Pan, Jiaoqing; Wang, Baojun; Zhu, Hongliang; Wang, Wei; Shao, Y.
2011
Source PublicationProceedings of SPIE- The International Society for Optical Engineering
ISSN0277786X
Volume8308Pages:83081W
AbstractA dual-depletion-region lumped electroabsorption modulator(DDR-LEAM) based on InP at1550nm is designed and fabricated. The measurement results reveal that the dual depletion region structure can reduce the device capacitance significantly without any degradation of extinction ratio. The simulation results show that the highly doped charge layer can concentrate almost all of the external applied voltage in MQW region and thus contribute to the identical extinction ratio curves. The expected3-dB bandwidth of the DDR-LEAMs using an equivalent circuit model is more than twice lager than that of the conventional LEAM.?2011 SPIE-OSA-IEEE.
metadata_83中科院半导体材料科学重点实验室
KeywordBandwidth Capacitance Circuit Theory Light Extinction Modulators Optoelectronic Devices
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23129
Collection中科院半导体材料科学重点实验室
Corresponding AuthorShao, Y.
Recommended Citation
GB/T 7714
Shao, Yongbo,Zhao, Lingjuan,Yu, Hongyan,et al. Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth[J]. Proceedings of SPIE- The International Society for Optical Engineering,2011,8308:83081W.
APA Shao, Yongbo.,Zhao, Lingjuan.,Yu, Hongyan.,Pan, Jiaoqing.,Wang, Baojun.,...&Shao, Y..(2011).Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth.Proceedings of SPIE- The International Society for Optical Engineering,8308,83081W.
MLA Shao, Yongbo,et al."Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth".Proceedings of SPIE- The International Society for Optical Engineering 8308(2011):83081W.
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