SEMI OpenIR  > 中科院半导体材料科学重点实验室
Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy
Li, Zhiwei; Zhang, Biao; Wang, Jun; Liu, Jianming; Liu, Xianglin; Yang, Shaoyan; Zhu, Qinsheng; Wang, Zhanguo; Li, Z.(lizhiwei@semi.ac.cn)
2011
Source PublicationNanoscale Research Letters
ISSN19317573
Volume6Pages:1-4
AbstractThe valence band offset(VBO) of wurtzite indium nitride/strontium titanate(InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be1.26±0.23 eV and the conduction band offset is deduced to be1.30±0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.?2011 Li et al.
metadata_83中科院半导体材料科学重点实验室
KeywordConduction Bands Photons x Ray Photoelectron Spectroscopy Zinc Sulfide
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23126
Collection中科院半导体材料科学重点实验室
Corresponding AuthorLi, Z.(lizhiwei@semi.ac.cn)
Recommended Citation
GB/T 7714
Li, Zhiwei,Zhang, Biao,Wang, Jun,et al. Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy[J]. Nanoscale Research Letters,2011,6:1-4.
APA Li, Zhiwei.,Zhang, Biao.,Wang, Jun.,Liu, Jianming.,Liu, Xianglin.,...&Li, Z..(2011).Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy.Nanoscale Research Letters,6,1-4.
MLA Li, Zhiwei,et al."Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy".Nanoscale Research Letters 6(2011):1-4.
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