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Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling
Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin; Huang, W.(wc_huang@mail.sitp.ac.cn)
2011
Source PublicationProceedings of SPIE- The International Society for Optical Engineering
ISSN0277786X
Volume8308Pages:83081Y
AbstractScanning capacitance microscopy(SCM) and scanning spreading resistance microscopy(SSRM) both are capable of mapping the2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution(<10 nm) in electrical characterization3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells(QWs).?2011 SPIE-OSA-IEEE.
metadata_83中科院半导体材料科学重点实验室
KeywordCapacitance Carrier Concentration Characterization Diffusion Optoelectronic Devices Photodetectors Scanning Semiconductor Device Structures Semiconductor Devices Semiconductor Quantum Wells Thermionic Emission
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23125
Collection中科院半导体材料科学重点实验室
Corresponding AuthorHuang, W.(wc_huang@mail.sitp.ac.cn)
Recommended Citation
GB/T 7714
Huang, Wenchao,Xia, Hui,Wang, Shaowei,et al. Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling[J]. Proceedings of SPIE- The International Society for Optical Engineering,2011,8308:83081Y.
APA Huang, Wenchao.,Xia, Hui.,Wang, Shaowei.,Deng, Honghai.,Wei, Peng.,...&Huang, W..(2011).Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling.Proceedings of SPIE- The International Society for Optical Engineering,8308,83081Y.
MLA Huang, Wenchao,et al."Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling".Proceedings of SPIE- The International Society for Optical Engineering 8308(2011):83081Y.
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