SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of gas pressure on the properties of silicon thin film
Hao, Hui-Ying; Li, Wei-Min; Zeng, Xiang-Bo; Kong, Guang-Lin; Liao, Xian-Bo; Hao, H.-Y.
2011
Source PublicationGongneng Cailiao/Journal of Functional Materials
ISSN10019731
Volume42Issue:8Pages:1489-1491
AbstractA series of transition films from amorphous to microcrystalline silicon was successfully prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).Effects of gas pressure on the microstructure, photoelectric and transport properties of the films were investigated.The results indicate that increase of gas pressure improve the photosensitivity and deposition rate, while the order degree of the microstructure and transport properties get worse.
metadata_83中科院半导体材料科学重点实验室
KeywordAmorphous Films Chemical Vapor Deposition Deposition Microcrystalline Silicon Microstructure Photoelectricity Plasma Deposition Plasma Enhanced Chemical Vapor Deposition Pressure Effects Semiconducting Silicon Compounds Transport Properties
Subject Area半导体材料
Indexed ByEI
Language中文
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23121
Collection中科院半导体材料科学重点实验室
Corresponding AuthorHao, H.-Y.
Recommended Citation
GB/T 7714
Hao, Hui-Ying,Li, Wei-Min,Zeng, Xiang-Bo,et al. Effect of gas pressure on the properties of silicon thin film[J]. Gongneng Cailiao/Journal of Functional Materials,2011,42(8):1489-1491.
APA Hao, Hui-Ying,Li, Wei-Min,Zeng, Xiang-Bo,Kong, Guang-Lin,Liao, Xian-Bo,&Hao, H.-Y..(2011).Effect of gas pressure on the properties of silicon thin film.Gongneng Cailiao/Journal of Functional Materials,42(8),1489-1491.
MLA Hao, Hui-Ying,et al."Effect of gas pressure on the properties of silicon thin film".Gongneng Cailiao/Journal of Functional Materials 42.8(2011):1489-1491.
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