Passively mode-locked Nd:YVO4 laser using a single-walled carbon nanotube saturable absorber pumped by880nm laser diode | |
Zhang, Ling; Wang, Yong Gang; Yu, Hai Juan; Zhang, Shu Bao; Sun, Wei; Han, Ze Hua; Hou, Wei; Lin, Xue Chun; Li, Jin Min; Zhang, L. | |
2011 | |
Source Publication | Japanese Journal of Applied Physics
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ISSN | 00214922 |
Volume | 50Issue:12Pages:122703 |
Abstract | We report on a passively mode-locked Nd:YVO4 laser using a single-walled carbon nanotube saturable absorber(SWCNT-SA) fabricated by vertical evaporation. An880nm laser diode pump source was used to reduce the thermal load of the laser crystal. At a pump power of11.8 W, a1.8W average output power was achieved for a continuous wave mode-locked laser with an optical conversion efficiency of15.3%. The repetition rate of the passively mode-locked pulse was90MHz with a15 ps pulse width. The pulse energy and peak power of the mode-locked laser were20 nJ and1.3 kW, respectively.?2011 The Japan Society of Applied Physics. |
metadata_83 | 全固态光源实验室 |
Keyword | Conversion Efficiency Neodymium Pulse Repetition Rate Pumping(Laser) Single-walled Carbon Nanotubes(Swcn) |
Subject Area | 半导体器件 |
Indexed By | EI |
Language | 英语 |
Date Available | 2012-06-14 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23108 |
Collection | 全固态光源实验室 |
Corresponding Author | Zhang, L. |
Recommended Citation GB/T 7714 | Zhang, Ling,Wang, Yong Gang,Yu, Hai Juan,et al. Passively mode-locked Nd:YVO4 laser using a single-walled carbon nanotube saturable absorber pumped by880nm laser diode[J]. Japanese Journal of Applied Physics,2011,50(12):122703. |
APA | Zhang, Ling.,Wang, Yong Gang.,Yu, Hai Juan.,Zhang, Shu Bao.,Sun, Wei.,...&Zhang, L..(2011).Passively mode-locked Nd:YVO4 laser using a single-walled carbon nanotube saturable absorber pumped by880nm laser diode.Japanese Journal of Applied Physics,50(12),122703. |
MLA | Zhang, Ling,et al."Passively mode-locked Nd:YVO4 laser using a single-walled carbon nanotube saturable absorber pumped by880nm laser diode".Japanese Journal of Applied Physics 50.12(2011):122703. |
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