Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector

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	Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector
	Yan, Tingjing; Chong, Ming; Zhao, Degang; Zhang, Shuang; Chen, Lianghui; Yan, T.(tingjing.yan@gmail.com)
	2011
Source Publication	Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
ISSN	10072276
Volume	40 Issue:1 Pages:32-35
Abstract	A short wavelength back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector was designed and fabricated. It was photosensitive in the waveband225-255 nm, and the peak wavelength was246 nm. A back-illuminated p-i-n heterojunction structure was grown on transparent sapphire substrate using MOCVD, the AlxGa1-xN alloy composition of the n-type window layer was71%, and the alloy composition of the unintentionally doped(UID) absorber layer was52%. The dark current measured at zero bias was27 pA, and the photocurrent was2.7 nA, while the peak responsivity was23 mA/W. A128×128 pixels solar blind ultraviolet photodetector array was fabricated on this basis. The diameter of each pixel was44μm with a50μm pitch.
metadata_83	光电系统实验室
Keyword	Alloying Fabrication Gallium Heterojunctions Optoelectronic Devices Pixels
Subject Area	光电子学
Indexed By	EI
Language	中文
Date Available	2012-06-14
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/23090
Collection	光电系统实验室
Corresponding Author	Yan, T.(tingjing.yan@gmail.com)
Recommended Citation GB/T 7714	Yan, Tingjing,Chong, Ming,Zhao, Degang,et al. Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2011,40(1):32-35.
APA	Yan, Tingjing,Chong, Ming,Zhao, Degang,Zhang, Shuang,Chen, Lianghui,&Yan, T..(2011).Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector.Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,40(1),32-35.
MLA	Yan, Tingjing,et al."Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector".Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering 40.1(2011):32-35.

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