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Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
Zhang, Yu; Wang, Guowei; Tang, Bao; Xu, Yingqiang; Xu, Yun; Song, Guofeng; Xu, Y.(xuyun@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:10Pages:103002
Abstract2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy(MBE). The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at77 K. The optimal growth temperature of quantum wells is440°C. The PL peak wavelength of quantum wells at300 K is1.98μm, and the FWHM is115 nm. Tellurium-doped GaSb buffer layers were optimized by Hall measurement. The optimal doping concentration is1.127×1018 cm-3 and the resistivity is5.295×10-3Ωcm.?2011 Chinese Institute of Electronics.
metadata_83光电系统实验室
KeywordBuffer Layers Epitaxial Growth Gallium Alloys Indium Antimonides Molecular Beam Epitaxy Molecular Beams Optical Waveguides Optimization Semiconducting Gallium Arsenide Semiconductor Quantum Wells Tellurium Tellurium Compounds
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23089
Collection光电系统实验室
Corresponding AuthorXu, Y.(xuyun@semi.ac.cn)
Recommended Citation
GB/T 7714
Zhang, Yu,Wang, Guowei,Tang, Bao,et al. Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers[J]. Journal of Semiconductors,2011,32(10):103002.
APA Zhang, Yu.,Wang, Guowei.,Tang, Bao.,Xu, Yingqiang.,Xu, Yun.,...&Xu, Y..(2011).Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers.Journal of Semiconductors,32(10),103002.
MLA Zhang, Yu,et al."Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers".Journal of Semiconductors 32.10(2011):103002.
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