| Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs | |
| Zhang, Yanbo; Du, Yandong; Xiong, Ying; Yang, Xiang; Han, Weihua; Yang, Fuhua,; Han, W.(weihua@semi.ac.cn) | |
| 2011 | |
| Source Publication | Journal of Semiconductors
 |
| ISSN | 16744926 |
| Volume | 32Issue:9Pages:94001 |
| Abstract | Comparisons are performed to study the drive current of accumulation-mode(AM) p-channel wrap-gated Fin-FETs. The drive current of the AM p-channel FET is15%-26% larger than that of the inversion-mode(IM) p-channel FET with the same wrap-gated fin channel, because of the body current component in the AM FET, which becomes less dominative as the gate overdrive becomes larger. The drive currents of the AM p-channel wrap-gated Fin-FETs are50% larger than those of the AM p-channel planar FETs, which arises from effective conducting surface broadening and volume accumulation in the AM wrap-gated Fin-FETs. The effective conducting surface broadening is due to wrap-gate-induced multi-surface conduction, while the volume accumulation, namely the majority carrier concentration anywhere in the fin cross section exceeding the fin doping density, is due to the coupling of electric fields from different parts of the wrap gate. Moreover, for AM p-channel wrap-gated Fin-FETs, the current in channel along(110) is larger than that in channel along(100), which arises from the surface mobility difference due to different transport directions and surface orientations. That is more obvious as the gate overdrive becomes larger, when the surface current component plays a more dominative role in the total current.?2011 Chinese Institute of Electronics. |
| metadata_83 | 半导体集成技术工程研究中心 |
| Keyword | Carrier Concentration Electric Fields Fins(Heat Exchange) |
| Subject Area | 微电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2012-06-14 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23070 |
| Collection | 半导体集成技术工程研究中心 |
| Corresponding Author | Han, W.(weihua@semi.ac.cn) |
| Recommended Citation GB/T 7714 | Zhang, Yanbo,Du, Yandong,Xiong, Ying,et al. Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs[J]. Journal of Semiconductors,2011,32(9):94001. |
| APA | Zhang, Yanbo.,Du, Yandong.,Xiong, Ying.,Yang, Xiang.,Han, Weihua.,...&Han, W..(2011).Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs.Journal of Semiconductors,32(9),94001. |
| MLA | Zhang, Yanbo,et al."Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs".Journal of Semiconductors 32.9(2011):94001. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012151.pdf（747KB） | 限制开放 | License | Application Full Text | |||
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