SEMI OpenIR  > 半导体集成技术工程研究中心
Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs
Zhang, Yanbo; Du, Yandong; Xiong, Ying; Yang, Xiang; Han, Weihua; Yang, Fuhua,; Han, W.(weihua@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:9Pages:94001
AbstractComparisons are performed to study the drive current of accumulation-mode(AM) p-channel wrap-gated Fin-FETs. The drive current of the AM p-channel FET is15%-26% larger than that of the inversion-mode(IM) p-channel FET with the same wrap-gated fin channel, because of the body current component in the AM FET, which becomes less dominative as the gate overdrive becomes larger. The drive currents of the AM p-channel wrap-gated Fin-FETs are50% larger than those of the AM p-channel planar FETs, which arises from effective conducting surface broadening and volume accumulation in the AM wrap-gated Fin-FETs. The effective conducting surface broadening is due to wrap-gate-induced multi-surface conduction, while the volume accumulation, namely the majority carrier concentration anywhere in the fin cross section exceeding the fin doping density, is due to the coupling of electric fields from different parts of the wrap gate. Moreover, for AM p-channel wrap-gated Fin-FETs, the current in channel along(110) is larger than that in channel along(100), which arises from the surface mobility difference due to different transport directions and surface orientations. That is more obvious as the gate overdrive becomes larger, when the surface current component plays a more dominative role in the total current.?2011 Chinese Institute of Electronics.
metadata_83半导体集成技术工程研究中心
KeywordCarrier Concentration Electric Fields Fins(Heat Exchange)
Subject Area微电子学
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23070
Collection半导体集成技术工程研究中心
Corresponding AuthorHan, W.(weihua@semi.ac.cn)
Recommended Citation
GB/T 7714
Zhang, Yanbo,Du, Yandong,Xiong, Ying,et al. Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs[J]. Journal of Semiconductors,2011,32(9):94001.
APA Zhang, Yanbo.,Du, Yandong.,Xiong, Ying.,Yang, Xiang.,Han, Weihua.,...&Han, W..(2011).Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs.Journal of Semiconductors,32(9),94001.
MLA Zhang, Yanbo,et al."Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs".Journal of Semiconductors 32.9(2011):94001.
Files in This Item:
File Name/Size DocType Version Access License
2012151.pdf(747KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhang, Yanbo]'s Articles
[Du, Yandong]'s Articles
[Xiong, Ying]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhang, Yanbo]'s Articles
[Du, Yandong]'s Articles
[Xiong, Ying]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhang, Yanbo]'s Articles
[Du, Yandong]'s Articles
[Xiong, Ying]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.