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Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots
Li, Y.Q.; Wang, X.D.; Xu, X.N.; Liu, W.; Yang, F.H.; Zeng, Y.P.; Wang, X.D.(xdwang@semi.ac.cn)
2011
Source PublicationPhysica E: Low-Dimensional Systems and Nanostructures
ISSN13869477
Volume44Issue:3Pages:686-689
AbstractThe output characteristics of a modulation-doped GaAs/AlGaAs field-effect transistor with InAs quantum dots(QDs) embedded in the barrier layer(QDFET) have been studied at low temperature. Optically induced current oscillation in the output currentvoltage(IV) curves has been found under the near-infrared light illumination. It is ascribed to the recombination of real space transferred electrons and photoexcited holes captured by the QDs. Furthermore, InAs QDs layer can also capture electrons and act as a nano-floating gate, which causes a bistability in the two-dimensional electron gas(2DEG) conductance. Our results suggest that the QDFET is a promising candidate for developing phototransistor or logic circuits.?2011 Elsevier B.V.
metadata_83半导体集成技术工程研究中心
KeywordElectron Absorption Indium Arsenide Logic Circuits Modfets Modulation Two Dimensional Electron Gas
Subject Area微电子学
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23068
Collection半导体集成技术工程研究中心
Corresponding AuthorWang, X.D.(xdwang@semi.ac.cn)
Recommended Citation
GB/T 7714
Li, Y.Q.,Wang, X.D.,Xu, X.N.,et al. Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots[J]. Physica E: Low-Dimensional Systems and Nanostructures,2011,44(3):686-689.
APA Li, Y.Q..,Wang, X.D..,Xu, X.N..,Liu, W..,Yang, F.H..,...&Wang, X.D..(2011).Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots.Physica E: Low-Dimensional Systems and Nanostructures,44(3),686-689.
MLA Li, Y.Q.,et al."Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots".Physica E: Low-Dimensional Systems and Nanostructures 44.3(2011):686-689.
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