| T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation | |
| Du, Y.D.; Cao, H.Z.; Yan, W.; Han, W.H.; Liu, Y.; Dong, X.Z.; Zhang, Y.B.; Jin, F.; Zhao, Z.S.; Yang, F.H.; Duan, X.M.; Han, W.H.(weihua@semi.ac.cn) | |
| 2011 | |
| Source Publication | Applied Physics A: Materials Science and Processing
 |
| ISSN | 09478396 |
| Pages | 1-5 |
| Abstract | Femtosecond laser as a maskless lithography technique is able to fabricate structures far smaller than the diffraction limit to a value within sub-micrometer resolution. We present the femtosecond laser lithography without ablation on the positive photoresist is applied in fabricating T-shaped gate AlGaN/GaN HEMT. The feature sizes of femtosecond laser lithography were determined by the incident laser power, the scan speed of the laser focus, the number of scan times, and the substrate materials. T-shaped gate with the smallest gate length204 nm could be fabricated by dielectric-defined process using femtosecond laser lithography. The fabricated AlGaN/GaN HEMT with380 nm T-gate exhibits a maximum drain current density of500 mA/mm and a maximum peak extrinsic transconductance of173 mS/mm.?2011 Springer-Verlag. |
| metadata_83 | 半导体集成技术工程研究中心 |
| Keyword | Ablation Drain Current Fabrication Gallium Nitride High Electron Mobility Transistors Photoresists Ultrashort Pulses |
| Subject Area | 微电子学 |
| Indexed By | EI |
| Date Available | 2012-06-14 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23064 |
| Collection | 半导体集成技术工程研究中心 |
| Corresponding Author | Han, W.H.(weihua@semi.ac.cn) |
| Recommended Citation GB/T 7714 | Du, Y.D.,Cao, H.Z.,Yan, W.,et al. T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation[J]. Applied Physics A: Materials Science and Processing,2011:1-5. |
| APA | Du, Y.D..,Cao, H.Z..,Yan, W..,Han, W.H..,Liu, Y..,...&Han, W.H..(2011).T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation.Applied Physics A: Materials Science and Processing,1-5. |
| MLA | Du, Y.D.,et al."T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation".Applied Physics A: Materials Science and Processing (2011):1-5. |
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| T-shaped gate AlGaN （447KB） | 限制开放 | License | Application Full Text | |||
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