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T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation
Du, Y.D.; Cao, H.Z.; Yan, W.; Han, W.H.; Liu, Y.; Dong, X.Z.; Zhang, Y.B.; Jin, F.; Zhao, Z.S.; Yang, F.H.; Duan, X.M.; Han, W.H.(weihua@semi.ac.cn)
2011
Source PublicationApplied Physics A: Materials Science and Processing
ISSN09478396
Pages1-5
AbstractFemtosecond laser as a maskless lithography technique is able to fabricate structures far smaller than the diffraction limit to a value within sub-micrometer resolution. We present the femtosecond laser lithography without ablation on the positive photoresist is applied in fabricating T-shaped gate AlGaN/GaN HEMT. The feature sizes of femtosecond laser lithography were determined by the incident laser power, the scan speed of the laser focus, the number of scan times, and the substrate materials. T-shaped gate with the smallest gate length204 nm could be fabricated by dielectric-defined process using femtosecond laser lithography. The fabricated AlGaN/GaN HEMT with380 nm T-gate exhibits a maximum drain current density of500 mA/mm and a maximum peak extrinsic transconductance of173 mS/mm.?2011 Springer-Verlag.
metadata_83半导体集成技术工程研究中心
KeywordAblation Drain Current Fabrication Gallium Nitride High Electron Mobility Transistors Photoresists Ultrashort Pulses
Subject Area微电子学
Indexed ByEI
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23064
Collection半导体集成技术工程研究中心
Corresponding AuthorHan, W.H.(weihua@semi.ac.cn)
Recommended Citation
GB/T 7714
Du, Y.D.,Cao, H.Z.,Yan, W.,et al. T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation[J]. Applied Physics A: Materials Science and Processing,2011:1-5.
APA Du, Y.D..,Cao, H.Z..,Yan, W..,Han, W.H..,Liu, Y..,...&Han, W.H..(2011).T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation.Applied Physics A: Materials Science and Processing,1-5.
MLA Du, Y.D.,et al."T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation".Applied Physics A: Materials Science and Processing (2011):1-5.
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