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A novel monolithic ultraviolet image sensor based on a standard CMOS process | |
Li, Guike; Feng, Peng; Wu, Nanjian; Li, G.(liguike@semi.ac.cn) | |
2011 | |
Source Publication | Journal of Semiconductors
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ISSN | 16744926 |
Volume | 32Issue:10Pages:105008 |
Abstract | We present a monolithic ultraviolet(UV) image sensor based on a standard CMOS process. A compact UV sensitive device structure is designed as a pixel for the image sensor. This UV image sensor consists of a CMOS pixel array, high-voltage switches, a readout circuit and a digital control circuit. A16×16 image sensor prototype chip is implemented in a0.18μm standard CMOS logic process. The pixel and image sensor were measured. Experimental results demonstrate that the image sensor has a high sensitivity of0.072 V/(mJ/cm2) and can capture a UV image. It is suitable for large-scale monolithic bio-medical and space applications.?2011 Chinese Institute of Electronics. |
metadata_83 | 半导体超晶格国家重点实验室 |
Keyword | Cmos Integrated Circuits Digital Control Systems Pixels Sensors Space Applications Standards |
Subject Area | 半导体物理 |
Indexed By | EI |
Language | 英语 |
Date Available | 2012-06-14 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23060 |
Collection | 半导体超晶格国家重点实验室 |
Corresponding Author | Li, G.(liguike@semi.ac.cn) |
Recommended Citation GB/T 7714 | Li, Guike,Feng, Peng,Wu, Nanjian,et al. A novel monolithic ultraviolet image sensor based on a standard CMOS process[J]. Journal of Semiconductors,2011,32(10):105008. |
APA | Li, Guike,Feng, Peng,Wu, Nanjian,&Li, G..(2011).A novel monolithic ultraviolet image sensor based on a standard CMOS process.Journal of Semiconductors,32(10),105008. |
MLA | Li, Guike,et al."A novel monolithic ultraviolet image sensor based on a standard CMOS process".Journal of Semiconductors 32.10(2011):105008. |
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