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A novel monolithic ultraviolet image sensor based on a standard CMOS process
Li, Guike; Feng, Peng; Wu, Nanjian; Li, G.(liguike@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:10Pages:105008
AbstractWe present a monolithic ultraviolet(UV) image sensor based on a standard CMOS process. A compact UV sensitive device structure is designed as a pixel for the image sensor. This UV image sensor consists of a CMOS pixel array, high-voltage switches, a readout circuit and a digital control circuit. A16×16 image sensor prototype chip is implemented in a0.18μm standard CMOS logic process. The pixel and image sensor were measured. Experimental results demonstrate that the image sensor has a high sensitivity of0.072 V/(mJ/cm2) and can capture a UV image. It is suitable for large-scale monolithic bio-medical and space applications.?2011 Chinese Institute of Electronics.
metadata_83半导体超晶格国家重点实验室
KeywordCmos Integrated Circuits Digital Control Systems Pixels Sensors Space Applications Standards
Subject Area半导体物理
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23060
Collection半导体超晶格国家重点实验室
Corresponding AuthorLi, G.(liguike@semi.ac.cn)
Recommended Citation
GB/T 7714
Li, Guike,Feng, Peng,Wu, Nanjian,et al. A novel monolithic ultraviolet image sensor based on a standard CMOS process[J]. Journal of Semiconductors,2011,32(10):105008.
APA Li, Guike,Feng, Peng,Wu, Nanjian,&Li, G..(2011).A novel monolithic ultraviolet image sensor based on a standard CMOS process.Journal of Semiconductors,32(10),105008.
MLA Li, Guike,et al."A novel monolithic ultraviolet image sensor based on a standard CMOS process".Journal of Semiconductors 32.10(2011):105008.
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