Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy

	Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
	He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan; He, J.(hejifang@semi.ac.cn)
	2011
Source Publication	Journal of Semiconductors
ISSN	16744926
Volume	32 Issue:4 Pages:43004
Abstract	Molecular beam epitaxy growth of an InxGa1-xAs/GaAs quantum well(QW) structure(x equals to0.17 or0.3) on offcut(100) Ge substrate has been investigated. The samples were characterized by atomic force microscopy, photoluminescence(PL), and high resolution transmission electron microscopy. High temperature annealing of the Ge substrate is necessary to grow GaAs buffer layer without anti-phase domains. During the subsequent growth of the GaAs buffer layer and an InxGa1-xAs/GaAs QW structure, temperature plays a key role. The mechanism by which temperature influences the material quality is discussed. High quality InxGa1-xAs/GaAs QW structure samples on Ge substrate with high PL intensity, narrow PL linewidth and flat surface morphology have been achieved by optimizing growth temperatures. Our results show promising device applications for III- V compound semiconductor materials grown on Ge substrates.?2011 Chinese Institute of Electronics.
metadata_83	半导体超晶格国家重点实验室
Keyword	Atomic Force Microscopy Buffer Layers Epitaxial Growth Gallium Alloys Gallium Arsenide Germanium Growth Temperature High Resolution Transmission Electron Microscopy Molecular Beam Epitaxy Molecular Beams Semiconducting Gallium Semiconductor Device Structures Semiconductor Quantum Wells
Subject Area	半导体物理
Indexed By	EI
Language	英语
Date Available	2012-06-14
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/23058
Collection	半导体超晶格国家重点实验室
Corresponding Author	He, J.(hejifang@semi.ac.cn)
Recommended Citation GB/T 7714	He, Jifang,Shang, Xiangjun,Li, Mifeng,et al. Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy[J]. Journal of Semiconductors,2011,32(4):43004.
APA	He, Jifang.,Shang, Xiangjun.,Li, Mifeng.,Zhu, Yan.,Chang, Xiuying.,...&He, J..(2011).Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy.Journal of Semiconductors,32(4),43004.
MLA	He, Jifang,et al."Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy".Journal of Semiconductors 32.4(2011):43004.

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