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Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan; He, J.(hejifang@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:4Pages:43004
AbstractMolecular beam epitaxy growth of an InxGa1-xAs/GaAs quantum well(QW) structure(x equals to0.17 or0.3) on offcut(100) Ge substrate has been investigated. The samples were characterized by atomic force microscopy, photoluminescence(PL), and high resolution transmission electron microscopy. High temperature annealing of the Ge substrate is necessary to grow GaAs buffer layer without anti-phase domains. During the subsequent growth of the GaAs buffer layer and an InxGa1-xAs/GaAs QW structure, temperature plays a key role. The mechanism by which temperature influences the material quality is discussed. High quality InxGa1-xAs/GaAs QW structure samples on Ge substrate with high PL intensity, narrow PL linewidth and flat surface morphology have been achieved by optimizing growth temperatures. Our results show promising device applications for III- V compound semiconductor materials grown on Ge substrates.?2011 Chinese Institute of Electronics.
metadata_83半导体超晶格国家重点实验室
KeywordAtomic Force Microscopy Buffer Layers Epitaxial Growth Gallium Alloys Gallium Arsenide Germanium Growth Temperature High Resolution Transmission Electron Microscopy Molecular Beam Epitaxy Molecular Beams Semiconducting Gallium Semiconductor Device Structures Semiconductor Quantum Wells
Subject Area半导体物理
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23058
Collection半导体超晶格国家重点实验室
Corresponding AuthorHe, J.(hejifang@semi.ac.cn)
Recommended Citation
GB/T 7714
He, Jifang,Shang, Xiangjun,Li, Mifeng,et al. Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy[J]. Journal of Semiconductors,2011,32(4):43004.
APA He, Jifang.,Shang, Xiangjun.,Li, Mifeng.,Zhu, Yan.,Chang, Xiuying.,...&He, J..(2011).Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy.Journal of Semiconductors,32(4),43004.
MLA He, Jifang,et al."Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy".Journal of Semiconductors 32.4(2011):43004.
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