Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation

	Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation
	Zhang, Renping; Yan, Wei; Wang, Xiaoliang; Yang, Fuhua; Zhang, R.(zhangrenping@semi.ac.cn)
	2011
Source Publication	Journal of Semiconductors
ISSN	16744926
Volume	32 Issue:6 Pages:64001
Abstract	AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and characterized. A variety of techniques were used to improve device performance, such as AlN interlayer, silicon nitride passivation, high aspect ratio T-shaped gate, low resistance ohmic contact and short drain- source distance. DC and RF performances of as-fabricated HEMTs were characterized by utilizing a semiconductor characterization system and a vector network analyzer, respectively. As-fabricated devices exhibited a maximum drain current density of1.41 A/mm and a maximum peak extrinsic transconductance of317 mS/mm. The obtained current density is larger than those reported in the literature to date, implemented with a domestic wafer and processes. Furthermore, a unity current gain cut-off frequency of74.3 GHz and a maximum oscillation frequency of112.4 GHz were obtained on a device with an80 nm gate length.?2011 Chinese Institute of Electronics.
metadata_83	半导体超晶格国家重点实验室
Keyword	Aspect Ratio Current Density Drain Current Electric Network Analysis Electric Network Analyzers Electron Mobility Fabrication Gallium Nitride Ohmic Contacts Passivation Silicon Nitride Silicon Wafers
Subject Area	半导体物理
Indexed By	EI
Date Available	2012-06-14
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/23057
Collection	半导体超晶格国家重点实验室
Corresponding Author	Zhang, R.(zhangrenping@semi.ac.cn)
Recommended Citation GB/T 7714	Zhang, Renping,Yan, Wei,Wang, Xiaoliang,et al. Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation[J]. Journal of Semiconductors,2011,32(6):64001.
APA	Zhang, Renping,Yan, Wei,Wang, Xiaoliang,Yang, Fuhua,&Zhang, R..(2011).Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation.Journal of Semiconductors,32(6),64001.
MLA	Zhang, Renping,et al."Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation".Journal of Semiconductors 32.6(2011):64001.

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