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Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation | |
Zhang, Renping; Yan, Wei; Wang, Xiaoliang; Yang, Fuhua; Zhang, R.(zhangrenping@semi.ac.cn) | |
2011 | |
Source Publication | Journal of Semiconductors
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ISSN | 16744926 |
Volume | 32Issue:6Pages:64001 |
Abstract | AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and characterized. A variety of techniques were used to improve device performance, such as AlN interlayer, silicon nitride passivation, high aspect ratio T-shaped gate, low resistance ohmic contact and short drain- source distance. DC and RF performances of as-fabricated HEMTs were characterized by utilizing a semiconductor characterization system and a vector network analyzer, respectively. As-fabricated devices exhibited a maximum drain current density of1.41 A/mm and a maximum peak extrinsic transconductance of317 mS/mm. The obtained current density is larger than those reported in the literature to date, implemented with a domestic wafer and processes. Furthermore, a unity current gain cut-off frequency of74.3 GHz and a maximum oscillation frequency of112.4 GHz were obtained on a device with an80 nm gate length.?2011 Chinese Institute of Electronics. |
metadata_83 | 半导体超晶格国家重点实验室 |
Keyword | Aspect Ratio Current Density Drain Current Electric Network Analysis Electric Network Analyzers Electron Mobility Fabrication Gallium Nitride Ohmic Contacts Passivation Silicon Nitride Silicon Wafers |
Subject Area | 半导体物理 |
Indexed By | EI |
Date Available | 2012-06-14 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23057 |
Collection | 半导体超晶格国家重点实验室 |
Corresponding Author | Zhang, R.(zhangrenping@semi.ac.cn) |
Recommended Citation GB/T 7714 | Zhang, Renping,Yan, Wei,Wang, Xiaoliang,et al. Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation[J]. Journal of Semiconductors,2011,32(6):64001. |
APA | Zhang, Renping,Yan, Wei,Wang, Xiaoliang,Yang, Fuhua,&Zhang, R..(2011).Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation.Journal of Semiconductors,32(6),64001. |
MLA | Zhang, Renping,et al."Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation".Journal of Semiconductors 32.6(2011):64001. |
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