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Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy | |
Zhu, Yan; Ni, Hai-qiao; Wang, Hai-li; He, Ji-fang; Li, Mi-feng; Shang, Xiang-jun; Niu, Zhi-chuan; Zhu, Y.(ttcow@126.com) | |
2011 | |
Source Publication | Optoelectronics Letters
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ISSN | 16731905 |
Volume | 7Issue:5Pages:325-329 |
Abstract | The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy(MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well(QW). The1.3-μm GaAs based metamorphic InGaAs QW is completed. A1.3-μm GaAs based metamorphic laser is reported.?2011 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg. |
metadata_83 | 半导体超晶格国家重点实验室 |
Keyword | Epitaxial Growth Gallium Arsenide Growth(Materials) Molecular Beam Epitaxy Semiconducting Gallium Semiconducting Indium Semiconductor Quantum Wells |
Subject Area | 半导体物理 |
Indexed By | EI |
Language | 英语 |
Date Available | 2012-06-14 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23052 |
Collection | 半导体超晶格国家重点实验室 |
Corresponding Author | Zhu, Y.(ttcow@126.com) |
Recommended Citation GB/T 7714 | Zhu, Yan,Ni, Hai-qiao,Wang, Hai-li,et al. Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy[J]. Optoelectronics Letters,2011,7(5):325-329. |
APA | Zhu, Yan.,Ni, Hai-qiao.,Wang, Hai-li.,He, Ji-fang.,Li, Mi-feng.,...&Zhu, Y..(2011).Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy.Optoelectronics Letters,7(5),325-329. |
MLA | Zhu, Yan,et al."Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy".Optoelectronics Letters 7.5(2011):325-329. |
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