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Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
Zhu, Yan; Ni, Hai-qiao; Wang, Hai-li; He, Ji-fang; Li, Mi-feng; Shang, Xiang-jun; Niu, Zhi-chuan; Zhu, Y.(ttcow@126.com)
2011
Source PublicationOptoelectronics Letters
ISSN16731905
Volume7Issue:5Pages:325-329
AbstractThe GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy(MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well(QW). The1.3-μm GaAs based metamorphic InGaAs QW is completed. A1.3-μm GaAs based metamorphic laser is reported.?2011 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
metadata_83半导体超晶格国家重点实验室
KeywordEpitaxial Growth Gallium Arsenide Growth(Materials) Molecular Beam Epitaxy Semiconducting Gallium Semiconducting Indium Semiconductor Quantum Wells
Subject Area半导体物理
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23052
Collection半导体超晶格国家重点实验室
Corresponding AuthorZhu, Y.(ttcow@126.com)
Recommended Citation
GB/T 7714
Zhu, Yan,Ni, Hai-qiao,Wang, Hai-li,et al. Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy[J]. Optoelectronics Letters,2011,7(5):325-329.
APA Zhu, Yan.,Ni, Hai-qiao.,Wang, Hai-li.,He, Ji-fang.,Li, Mi-feng.,...&Zhu, Y..(2011).Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy.Optoelectronics Letters,7(5),325-329.
MLA Zhu, Yan,et al."Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy".Optoelectronics Letters 7.5(2011):325-329.
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