Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

	Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
	Zhu, Yan; Ni, Hai-qiao; Wang, Hai-li; He, Ji-fang; Li, Mi-feng; Shang, Xiang-jun; Niu, Zhi-chuan; Zhu, Y.(ttcow@126.com)
	2011
Source Publication	Optoelectronics Letters
ISSN	16731905
Volume	7 Issue:5 Pages:325-329
Abstract	The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy(MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well(QW). The1.3-μm GaAs based metamorphic InGaAs QW is completed. A1.3-μm GaAs based metamorphic laser is reported.?2011 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
metadata_83	半导体超晶格国家重点实验室
Keyword	Epitaxial Growth Gallium Arsenide Growth(Materials) Molecular Beam Epitaxy Semiconducting Gallium Semiconducting Indium Semiconductor Quantum Wells
Subject Area	半导体物理
Indexed By	EI
Language	英语
Date Available	2012-06-14
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/23052
Collection	半导体超晶格国家重点实验室
Corresponding Author	Zhu, Y.(ttcow@126.com)
Recommended Citation GB/T 7714	Zhu, Yan,Ni, Hai-qiao,Wang, Hai-li,et al. Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy[J]. Optoelectronics Letters,2011,7(5):325-329.
APA	Zhu, Yan.,Ni, Hai-qiao.,Wang, Hai-li.,He, Ji-fang.,Li, Mi-feng.,...&Zhu, Y..(2011).Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy.Optoelectronics Letters,7(5),325-329.
MLA	Zhu, Yan,et al."Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy".Optoelectronics Letters 7.5(2011):325-329.

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