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Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy
Wang, S.L.; Meng, K.K.; Chen, L.; Xu, P.F.; Meng, H.J.; Lu, J.; Zhao, J.H.; Zhao, J.H.(jhzhao@red.semi.ac.cn)
2011
Source PublicationPhysica Status Solidi(C) Current Topics in Solid State Physics
ISSN18626351
Volume8Issue:2Pages:393-395
Abstract(Ga,Mn)As magnetic semiconductor quantum dots were fabricated on Si(001) substrates by droplet epitaxy using molecular-beam epitaxy. It is found that both the diameter and density of the(Ga,Mn)As quantum dots can be modulated by changing the amount of Ga deposited. The high-resolution transmission electron microscopy image shows that the dots possess a zincblende structure. The presence of ferromagnetic ordering with a Mn content of0.08 was observed, and the ferromagnetic transition temperature can be increased from approximately50 K to80 K by post-growth annealing.?2011 WILEY-VCH Verlag GmbH& Co. KGaA, Weinheim.
metadata_83半导体超晶格国家重点实验室
KeywordDrop Formation Epitaxial Growth Ferromagnetic Materials Ferromagnetism Gallium Alloys High Resolution Transmission Electron Microscopy Magnetic Semiconductors Manganese Semiconducting Silicon Semiconductor Growth Semiconductor Quantum Dots
Subject Area半导体物理
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23048
Collection半导体超晶格国家重点实验室
Corresponding AuthorZhao, J.H.(jhzhao@red.semi.ac.cn)
Recommended Citation
GB/T 7714
Wang, S.L.,Meng, K.K.,Chen, L.,et al. Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy[J]. Physica Status Solidi(C) Current Topics in Solid State Physics,2011,8(2):393-395.
APA Wang, S.L..,Meng, K.K..,Chen, L..,Xu, P.F..,Meng, H.J..,...&Zhao, J.H..(2011).Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy.Physica Status Solidi(C) Current Topics in Solid State Physics,8(2),393-395.
MLA Wang, S.L.,et al."Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy".Physica Status Solidi(C) Current Topics in Solid State Physics 8.2(2011):393-395.
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