SEMI OpenIR  > 半导体材料科学中心
Structures and optical characteristics of InGaN quantum dots grown by MBE
Wang, Baozhu; Yan, Cuiying; Wang, Xiaoliang; Wang, B.(wangbz@semi.ac.cn)
2011
Source PublicationXiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
ISSN1002185X
Volume40Issue:11Pages:2030-2032
AbstractInGaN quantum dots were grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy(RF-MBE). The effects of InN nuclear layer on the structural and optical characteristics of InGaN quantum dots were studied. In-situ reflection high energy electron diffraction(RHEED) was used to analyze the growth of the InGaN dots structures. Atomic force microscope(AFM) and photoluminescence(PL) were used to characterize the structure and optical properties of the InGaN quantum dots. The results show that the InGaN quantum dots grown on the InN nuclear layer can get higher density and better quality compared with that grown directly on GaN layer. The sizes of InGaN quantum dots grown on the InN nuclear layer are more uniform, about35-45 nm and the density can reach3.2×1010/cm2. The PL intensity of the InGaN quantum dots grown on the InN nuclear layer is twice as high as that of the InGaN quantum dots grown directly on GaN layer. The FWHM of the quantum dots PL peak is about10 nm.?2011, Northwest Institute for Nonferrous Metal Research. Published by Elsevier BV. All rights reserved.
metadata_83半导体材料科学中心
KeywordAtomic Force Microscopy Gallium Nitride Molecular Beam Epitaxy Optical Materials Optical Properties Reflection High Energy Electron Diffraction Sapphire
Subject Area半导体材料
Indexed ByEI
Language中文
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23043
Collection半导体材料科学中心
Corresponding AuthorWang, B.(wangbz@semi.ac.cn)
Recommended Citation
GB/T 7714
Wang, Baozhu,Yan, Cuiying,Wang, Xiaoliang,et al. Structures and optical characteristics of InGaN quantum dots grown by MBE[J]. Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering,2011,40(11):2030-2032.
APA Wang, Baozhu,Yan, Cuiying,Wang, Xiaoliang,&Wang, B..(2011).Structures and optical characteristics of InGaN quantum dots grown by MBE.Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering,40(11),2030-2032.
MLA Wang, Baozhu,et al."Structures and optical characteristics of InGaN quantum dots grown by MBE".Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering 40.11(2011):2030-2032.
Files in This Item:
File Name/Size DocType Version Access License
2012118.pdf(952KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Wang, Baozhu]'s Articles
[Yan, Cuiying]'s Articles
[Wang, Xiaoliang]'s Articles
Baidu academic
Similar articles in Baidu academic
[Wang, Baozhu]'s Articles
[Yan, Cuiying]'s Articles
[Wang, Xiaoliang]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wang, Baozhu]'s Articles
[Yan, Cuiying]'s Articles
[Wang, Xiaoliang]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.