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Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang; Wu, H.(hlwu@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:7Pages:72002
AbstractA P-layer can be formed on a SiC wafer surface by using multiple Al ion implantations and post-implantation annealing in a low pressure CVD reactor. The Al depth profile was almost box shaped with a height of1×1019cm-3 and a depth of550 nm. Three different annealing processes were developed to protect the wafer surface. Variations in RMS roughness have been measured and compared with each other. The implanted SiC, annealed with a carbon cap, maintains a high-quality surface with an RMS roughness as low as3.8 nm. Macrosteps and terraces were found in the SiC surface, which annealed by the other two processes(protect in Ar/protect with SiC capped wafer in Ar). The RMS roughness is12.2 nm and6.6 nm, respectively.?2011 Chinese Institute of Electronics.
metadata_83半导体材料科学中心
KeywordAluminum Annealing Ion implantatIon Pressure Effects Semiconducting Silicon Compounds Silicon Carbide Surface Roughness
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23042
Collection半导体材料科学中心
Corresponding AuthorWu, H.(hlwu@semi.ac.cn)
Recommended Citation
GB/T 7714
Wu, Hailei,Sun, Guosheng,Yang, Ting,et al. Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC[J]. Journal of Semiconductors,2011,32(7):72002.
APA Wu, Hailei.,Sun, Guosheng.,Yang, Ting.,Yan, Guoguo.,Wang, Lei.,...&Wu, H..(2011).Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC.Journal of Semiconductors,32(7),72002.
MLA Wu, Hailei,et al."Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC".Journal of Semiconductors 32.7(2011):72002.
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