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High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
Yin, Haibo; Wang, Xiaoliang; Ran, Junxue; Hu, Guoxin; Zhang, Lu; Xiao, Hongling; Li, Jing; Li, Jinmin; Yin, H.(hbyin@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:3Pages:33002
AbstractA homemade7×2 inch MOCVD system is presented. With this system, high quality GaN epitaxial layers, InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown. The non-uniformity of undoped GaN epitaxial layers is as low as2.86%. Using the LED structural epitaxial layers, blue LED chips with area of350×350μm2 were fabricated. Under20 mA injection current, the optical output power of the blue LED is8.62 mW.?2011 Chinese Institute of Electronics.
metadata_83半导体材料科学中心
KeywordEpitaxial Growth Gallium Nitride
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23041
Collection半导体材料科学中心
Corresponding AuthorYin, H.(hbyin@semi.ac.cn)
Recommended Citation
GB/T 7714
Yin, Haibo,Wang, Xiaoliang,Ran, Junxue,et al. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J]. Journal of Semiconductors,2011,32(3):33002.
APA Yin, Haibo.,Wang, Xiaoliang.,Ran, Junxue.,Hu, Guoxin.,Zhang, Lu.,...&Yin, H..(2011).High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system.Journal of Semiconductors,32(3),33002.
MLA Yin, Haibo,et al."High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system".Journal of Semiconductors 32.3(2011):33002.
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