| The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure | |
| Bi, Yang; Wang, XiaoLiang; Yang, CuiBai; Xiao, HongLing; Wang, CuiMei; Peng, EnChao; Lin, DeFeng; Feng, Chun; Jiang, LiJuan,; Bi, Y.(ybi@semi.ac.cn) | |
| 2011 | |
| Source Publication | Applied Physics A: Materials Science and Processing
 |
| ISSN | 09478396 |
| Volume | 104Issue:4Pages:1211-1216 |
| Abstract | This is a theoretical study of the1st AlN interlayer and the2nd GaN layer on properties of the Al0.3Ga0.7N/2nd AlN/2nd GaN/1st AlN/1st GaN HEMT structure by self-consistently solving coupled Schro¨dinger and Poisson equations. Our calculation shows that by increasing the1st AlN thickness from1.0 nm to3.0 nm, the2DEG, which is originally confined totally in the2nd channel, gradually decreases, begins to turn up and eventually concentrates in the1st one. The total2DEG(2DEG in both channels) sheet density increases nearly linearly with the increasing1st AlN thickness. And the slope of the potential profile of the AlGaN changes with the1st AlN thickness, causing the unusual dependence of the total2DEG sheet density on the thickness of the AlGaN barrier. The variations of2DEG distribution, the total2DEG sheet density and the conduction band profiles as a function of the2nd GaN thickness also have been discussed. Their physical mechanisms have been investigated on the basis of the surface state theory. And the confinement of2DEG can be further enhanced by the double-AlN interlayer, compared with the InGaN back-barrier.? Springer-Verlag2011. |
| metadata_83 | 半导体材料科学中心 |
| Keyword | Poisson Equation |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2012-06-14 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23040 |
| Collection | 半导体材料科学中心 |
| Corresponding Author | Bi, Y.(ybi@semi.ac.cn) |
| Recommended Citation GB/T 7714 | Bi, Yang,Wang, XiaoLiang,Yang, CuiBai,et al. The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure[J]. Applied Physics A: Materials Science and Processing,2011,104(4):1211-1216. |
| APA | Bi, Yang.,Wang, XiaoLiang.,Yang, CuiBai.,Xiao, HongLing.,Wang, CuiMei.,...&Bi, Y..(2011).The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure.Applied Physics A: Materials Science and Processing,104(4),1211-1216. |
| MLA | Bi, Yang,et al."The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure".Applied Physics A: Materials Science and Processing 104.4(2011):1211-1216. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012054.pdf（385KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment