| High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD | |
| Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang; Wu, H.(hlwu@semi.ac.cn) | |
| 2011 | |
| Source Publication | Journal of Semiconductors
 |
| ISSN | 16744926 |
| Volume | 32Issue:4Pages:43005 |
| Abstract | High quality, homoepitaxial layers of4H-SiC were grown on off-oriented4H-SiC(0001) Si planes in a vertical low-pressure hot-wall CVD system(LPCVD) by using trichlorosilane(TCS) as a silicon precursor source together with ethylene(C2H4) as a carbon precursor source. The growth rate of25-30μm/h has been achieved at lower temperatures between1500 and1530°C. The surface roughness and crystalline quality of50μm thick epitaxial layers(grown for2 h) did not deteriorate compared with the corresponding results of thinner layers(grown for30 min). The background doping concentration was reduced to2.13×1015× cm-3. The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.?2011 Chinese Institute of Electronics. |
| metadata_83 | 半导体材料科学中心 |
| Keyword | Epitaxial Growth Ethylene Growth Rate Morphology Surface Roughness |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2012-06-14 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23039 |
| Collection | 半导体材料科学中心 |
| Corresponding Author | Wu, H.(hlwu@semi.ac.cn) |
| Recommended Citation GB/T 7714 | Wu, Hailei,Sun, Guosheng,Yang, Ting,et al. High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD[J]. Journal of Semiconductors,2011,32(4):43005. |
| APA | Wu, Hailei.,Sun, Guosheng.,Yang, Ting.,Yan, Guoguo.,Wang, Lei.,...&Wu, H..(2011).High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD.Journal of Semiconductors,32(4),43005. |
| MLA | Wu, Hailei,et al."High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD".Journal of Semiconductors 32.4(2011):43005. |
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| 2012019.pdf（887KB） | 限制开放 | License | Application Full Text | |||
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