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Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor
Yan, Guoguo; Sun, Guosheng; Wu, Hailei; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang; Yan, G.(ggyan@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:6Pages:63001
AbstractWe report the latest results of the3C-SiC layer growth on Si(100) substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition(HWLPCVD) system with a rotating susceptor that was designed to support up to three50 mm-diameter wafers.3C-SiC film properties of the intra-wafer and the wafer-to-wafer, including crystalline morphologies and electronics, are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity(σ/mean) of~3.40% and~5.37% have been achieved in the3×50 mm configuration. Within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than4% and4.24%, respectively.?2011 Chinese Institute of Electronics.
metadata_83半导体材料科学中心
KeywordChemical Vapor Deposition Deposition Electric Resistance Epitaxial Growth Film Growth Sheet Resistance Silicon Carbide Silicon Wafers
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23038
Collection半导体材料科学中心
Corresponding AuthorYan, G.(ggyan@semi.ac.cn)
Recommended Citation
GB/T 7714
Yan, Guoguo,Sun, Guosheng,Wu, Hailei,et al. Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor[J]. Journal of Semiconductors,2011,32(6):63001.
APA Yan, Guoguo.,Sun, Guosheng.,Wu, Hailei.,Wang, Lei.,Zhao, Wanshun.,...&Yan, G..(2011).Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor.Journal of Semiconductors,32(6),63001.
MLA Yan, Guoguo,et al."Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor".Journal of Semiconductors 32.6(2011):63001.
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