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UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation
Zhao, Hongwei; Hu, Weixuan; Xue, Chunlai; Cheng, Buwen; Wang, Qiming; Zhao, H.(hwzhao@semi.ac.cn)
2011
Source PublicationIEEE International Conference on Group IV Photonics GFP
ISSN19492081
Issue1Pages:311-313
AbstractGe/SiGe multiple quantum wells(MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition(UHVCVD) technique. The quantum-confined Stark effect(QCSE) is clearly observed in our MQWs structure.?2011 IEEE.
metadata_83集成光电子学国家重点实验室
KeywordChemical Vapor Deposition Photonics
Subject Area光电子学
Indexed ByEI
Date Available2012-06-13
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23033
Collection集成光电子学国家重点实验室
Corresponding AuthorZhao, H.(hwzhao@semi.ac.cn)
Recommended Citation
GB/T 7714
Zhao, Hongwei,Hu, Weixuan,Xue, Chunlai,et al. UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation[J]. IEEE International Conference on Group IV Photonics GFP,2011(1):311-313.
APA Zhao, Hongwei,Hu, Weixuan,Xue, Chunlai,Cheng, Buwen,Wang, Qiming,&Zhao, H..(2011).UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation.IEEE International Conference on Group IV Photonics GFP(1),311-313.
MLA Zhao, Hongwei,et al."UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation".IEEE International Conference on Group IV Photonics GFP .1(2011):311-313.
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