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Schottky barrier light emitting diode in standard CMOS technology
Huang, Beiju; Wang, Wei; Dong, Zan; Zhang, Zanyun; Guo, Weilian; Chen, Hongda; Huang, B.(bjhuang@semi.ac.cn)
2011
Source PublicationGroup IV Photonics (GFP), 2011 8th IEEE International Conference on
ISSN19492081
Pages296-298
AbstractSchottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from673nm to785nm.?2011 IEEE.
metadata_83集成光电子学国家重点实验室
KeywordCmos Integrated Circuits Diodes Light Light Emission Photonics Schottky Barrier Diodes Semiconducting Silicon Compounds Semiconductor Diodes
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2012-06-13
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22972
Collection集成光电子学国家重点实验室
Corresponding AuthorHuang, B.(bjhuang@semi.ac.cn)
Recommended Citation
GB/T 7714
Huang, Beiju,Wang, Wei,Dong, Zan,et al. Schottky barrier light emitting diode in standard CMOS technology[J]. Group IV Photonics (GFP), 2011 8th IEEE International Conference on,2011:296-298.
APA Huang, Beiju.,Wang, Wei.,Dong, Zan.,Zhang, Zanyun.,Guo, Weilian.,...&Huang, B..(2011).Schottky barrier light emitting diode in standard CMOS technology.Group IV Photonics (GFP), 2011 8th IEEE International Conference on,296-298.
MLA Huang, Beiju,et al."Schottky barrier light emitting diode in standard CMOS technology".Group IV Photonics (GFP), 2011 8th IEEE International Conference on (2011):296-298.
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