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Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique
Zhou, Zhi-Wen; He, Jing-Kai; Li, Cheng; Yu, Jin-Zhong; Zhou, Z.-W.(zhouzw@sziit.com.cn)
2011
Source PublicationGuangdianzi Jiguang/Journal of Optoelectronics Laser
ISSN10050086
Volume22Issue:7Pages:1030-1033
AbstractHigh-quality and thick Ge epitaxial films are grown on Si substrates utilizing the low-temperature(LT) buffer technique by ultrahigh vacuum chemical vapor deposition(UHV-CVD) and are characterized by atomic force microscope, X-ray diffraction, and Raman spectroscopy. The results show that the LT Ge buffer is rough due to the three-dimensional islands formations, but the misfit stress is nearly fully relaxed. Fortunately, the rough LT Ge surface is effectively smoothed by subsequent growth at elevated temperature when the LT Ge buffer is thick enough and the compressive strain is largely relaxed. Finally, the210 nm Ge epitaxial film with smooth surface(root-mean-square roughness of1.2 nm), low threading dislocation density(5×105 cm-2), and sharp and symmetric X-ray diffraction peak(full width at half maximum of~460 arc sec) is achieved on LT Ge buffer with thickness of90 nm.
metadata_83集成光电子学国家重点实验室
KeywordAtomic Force Microscopy Atomic Spectroscopy Chemical Vapor Deposition Diffraction Epitaxial Growth Germanium Raman Spectroscopy Semiconducting Silicon Compounds Substrates Surface Morphology Ultrahigh Vacuum x Ray Diffraction
Subject Area光电子学
Indexed ByEI
Language中文
Date Available2012-06-13
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22968
Collection集成光电子学国家重点实验室
Corresponding AuthorZhou, Z.-W.(zhouzw@sziit.com.cn)
Recommended Citation
GB/T 7714
Zhou, Zhi-Wen,He, Jing-Kai,Li, Cheng,et al. Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique[J]. Guangdianzi Jiguang/Journal of Optoelectronics Laser,2011,22(7):1030-1033.
APA Zhou, Zhi-Wen,He, Jing-Kai,Li, Cheng,Yu, Jin-Zhong,&Zhou, Z.-W..(2011).Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique.Guangdianzi Jiguang/Journal of Optoelectronics Laser,22(7),1030-1033.
MLA Zhou, Zhi-Wen,et al."Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique".Guangdianzi Jiguang/Journal of Optoelectronics Laser 22.7(2011):1030-1033.
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