|Effects of grain size on resistance and transmittance transition of vanadium oxide thin film|
|Liang, Ji-Ran; Hu, Ming; Kan, Qiang; Chen, Tao; Liang, Xiu-Qin; Chen, Hong-Da; Liang, J.-R.(firstname.lastname@example.org)
|Source Publication||Cailiao Gongcheng/Journal of Materials Engineering
|Abstract||Vanadium oxide thin films were deposited by reactive direct current facing targets magnetron sputtering, and then annealed in oxygen ambience under different temperature to fabricate phase transition vanadium dioxide thin films with different grain size. The transformation of resistance and transmittance of vanadium oxide thin films were measured across phase transition. The results show that the proportion of VO2 in film is about40%(atom fraction) after annealed in300°C and360°C, the films have insulator-metal phase transition properties. The grain size is50 nm and100 nm, respectively. After annealing at360°C, the surface of vanadium oxide thin film becomes compact and some grain comes to merge. Electrical and optical transition properties across phase transition show that the transition temperature decreases as grain size increasing, however, the temperature width of phase transition keep constant. The temperature width of phase transition obtained from electrical transition properties is about30°C, but that from optical transition properties is only8°C.|
Grain Size And Shape
|Corresponding Author||Liang, J.-R.(email@example.com)|
Liang, Ji-Ran,Hu, Ming,Kan, Qiang,et al. Effects of grain size on resistance and transmittance transition of vanadium oxide thin film[J]. Cailiao Gongcheng/Journal of Materials Engineering,2011(4):58-62+74.
Liang, Ji-Ran.,Hu, Ming.,Kan, Qiang.,Chen, Tao.,Liang, Xiu-Qin.,...&Liang, J.-R..(2011).Effects of grain size on resistance and transmittance transition of vanadium oxide thin film.Cailiao Gongcheng/Journal of Materials Engineering(4),58-62+74.
Liang, Ji-Ran,et al."Effects of grain size on resistance and transmittance transition of vanadium oxide thin film".Cailiao Gongcheng/Journal of Materials Engineering .4(2011):58-62+74.
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