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Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As
Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Su, Shaojian; Liu, Zhi; Li, Yaming; Wang, Qiming; Cheng, B.(cbw@semi.ac.cn)
2011
Source PublicationIEEE International Conference on Group IV Photonics GFP
ISSN19492081
Pages314-316
AbstractEpitaxy of Ge on offcut Si(001) for growth of In0.01Ga0.99As was studied. Anti-phase domains were prevented in In0.01Ga0.99As layer except on the In0.01Ga0.99As/Ge interface. Threading dislocations of Ge deteriorate the quality of In0.01Ga0.99As remarkably.?2011 IEEE.
metadata_83集成光电子学国家重点实验室
KeywordEpitaxial Growth Germanium Indium Photonics Semiconducting Silicon Compounds Silicon
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2012-06-13
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22948
Collection集成光电子学国家重点实验室
Corresponding AuthorCheng, B.(cbw@semi.ac.cn)
Recommended Citation
GB/T 7714
Hu, Weixuan,Cheng, Buwen,Xue, Chunlai,et al. Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As[J]. IEEE International Conference on Group IV Photonics GFP,2011:314-316.
APA Hu, Weixuan.,Cheng, Buwen.,Xue, Chunlai.,Su, Shaojian.,Liu, Zhi.,...&Cheng, B..(2011).Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As.IEEE International Conference on Group IV Photonics GFP,314-316.
MLA Hu, Weixuan,et al."Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As".IEEE International Conference on Group IV Photonics GFP (2011):314-316.
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