Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As | |
Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Su, Shaojian; Liu, Zhi; Li, Yaming; Wang, Qiming; Cheng, B.(cbw@semi.ac.cn) | |
2011 | |
Source Publication | IEEE International Conference on Group IV Photonics GFP
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ISSN | 19492081 |
Pages | 314-316 |
Abstract | Epitaxy of Ge on offcut Si(001) for growth of In0.01Ga0.99As was studied. Anti-phase domains were prevented in In0.01Ga0.99As layer except on the In0.01Ga0.99As/Ge interface. Threading dislocations of Ge deteriorate the quality of In0.01Ga0.99As remarkably.?2011 IEEE. |
metadata_83 | 集成光电子学国家重点实验室 |
Keyword | Epitaxial Growth Germanium Indium Photonics Semiconducting Silicon Compounds Silicon |
Subject Area | 光电子学 |
Indexed By | EI |
Language | 英语 |
Date Available | 2012-06-13 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/22948 |
Collection | 集成光电子学国家重点实验室 |
Corresponding Author | Cheng, B.(cbw@semi.ac.cn) |
Recommended Citation GB/T 7714 | Hu, Weixuan,Cheng, Buwen,Xue, Chunlai,et al. Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As[J]. IEEE International Conference on Group IV Photonics GFP,2011:314-316. |
APA | Hu, Weixuan.,Cheng, Buwen.,Xue, Chunlai.,Su, Shaojian.,Liu, Zhi.,...&Cheng, B..(2011).Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As.IEEE International Conference on Group IV Photonics GFP,314-316. |
MLA | Hu, Weixuan,et al."Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As".IEEE International Conference on Group IV Photonics GFP (2011):314-316. |
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