| Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As | |
| Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Su, Shaojian; Liu, Zhi; Li, Yaming; Wang, Qiming; Cheng, B.(cbw@semi.ac.cn) | |
| 2011 | |
| Source Publication | IEEE International Conference on Group IV Photonics GFP
 |
| ISSN | 19492081 |
| Pages | 314-316 |
| Abstract | Epitaxy of Ge on offcut Si(001) for growth of In0.01Ga0.99As was studied. Anti-phase domains were prevented in In0.01Ga0.99As layer except on the In0.01Ga0.99As/Ge interface. Threading dislocations of Ge deteriorate the quality of In0.01Ga0.99As remarkably.?2011 IEEE. |
| metadata_83 | 集成光电子学国家重点实验室 |
| Keyword | Epitaxial Growth Germanium Indium Photonics Semiconducting Silicon Compounds Silicon |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2012-06-13 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22948 |
| Collection | 集成光电子学国家重点实验室 |
| Corresponding Author | Cheng, B.(cbw@semi.ac.cn) |
| Recommended Citation GB/T 7714 | Hu, Weixuan,Cheng, Buwen,Xue, Chunlai,et al. Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As[J]. IEEE International Conference on Group IV Photonics GFP,2011:314-316. |
| APA | Hu, Weixuan.,Cheng, Buwen.,Xue, Chunlai.,Su, Shaojian.,Liu, Zhi.,...&Cheng, B..(2011).Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As.IEEE International Conference on Group IV Photonics GFP,314-316. |
| MLA | Hu, Weixuan,et al."Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As".IEEE International Conference on Group IV Photonics GFP (2011):314-316. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012031.pdf（237KB） | 限制开放 | License | Application Full Text | |||
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