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A novel structure of silicon-on-insulator microring biosensor based on Young's two-slit interference and its simulation
Su, Baoqing; Wang, Chunxia; Kan, Qiang; Li, Junhua; Xie, Yiyang; Wang, Zhenzhen; Chen, Hongda; Wang, C.(cxwang@semi.ac.cn)
2011
Source PublicationJournal of Semiconductors
ISSN16744926
Volume32Issue:7Pages:74010
AbstractA novel silicon-on-insulator microring biosensor based on Young's twos lit interference has been demonstrated. The transducer signal from electric field intensity distribution on the interference screen is given by using the transfer matrix method(TMM) and two-slit interference principle. The result shows that the structure we propose is advantageous for sensing as the interference pattern is very sensitive to the ambient refractive index around the microring. A small perturbation in refractive index around the microringΔnc will result in a notable shift of destructive interference points(DIPs) on the interference screen. By detecting the shift of the DIPs, the ambient refractive index change can be obtained.?2011 Chinese Institute of Electronics.
metadata_83集成光电子学国家重点实验室
KeywordElectric Fields Light Refraction Refractive Index Refractometers Transfer Matrix Method
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2012-06-13
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22944
Collection集成光电子学国家重点实验室
Corresponding AuthorWang, C.(cxwang@semi.ac.cn)
Recommended Citation
GB/T 7714
Su, Baoqing,Wang, Chunxia,Kan, Qiang,et al. A novel structure of silicon-on-insulator microring biosensor based on Young's two-slit interference and its simulation[J]. Journal of Semiconductors,2011,32(7):74010.
APA Su, Baoqing.,Wang, Chunxia.,Kan, Qiang.,Li, Junhua.,Xie, Yiyang.,...&Wang, C..(2011).A novel structure of silicon-on-insulator microring biosensor based on Young's two-slit interference and its simulation.Journal of Semiconductors,32(7),74010.
MLA Su, Baoqing,et al."A novel structure of silicon-on-insulator microring biosensor based on Young's two-slit interference and its simulation".Journal of Semiconductors 32.7(2011):74010.
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