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Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions
Xiao, Xi; Li, Zhiyong; Hu, Yingtao; Yu, Yude; Yu, Jinzhong; Xiao, X.
2011
Source PublicationIEEE International Conference on Group IV Photonics GFP
ISSN19492081
Pages359-361
AbstractWe present a high-speed silicon microring resonator with misalignment-tolerant interleaved p-n junctions. Moderate doping concentration of2x1017 cm-3 results in a VπL of0.98 V·cm and a total propagation loss of<17 dB/cm.8 GHz modulation bandwidth and~30 GHz electric RC bandwidth are experimentally demonstrated.?2011 IEEE.
metadata_83集成光电子学国家重点实验室
KeywordAlignment Bandwidth Semiconductor Junctions
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2012-06-13
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22943
Collection集成光电子学国家重点实验室
Corresponding AuthorXiao, X.
Recommended Citation
GB/T 7714
Xiao, Xi,Li, Zhiyong,Hu, Yingtao,et al. Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions[J]. IEEE International Conference on Group IV Photonics GFP,2011:359-361.
APA Xiao, Xi,Li, Zhiyong,Hu, Yingtao,Yu, Yude,Yu, Jinzhong,&Xiao, X..(2011).Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions.IEEE International Conference on Group IV Photonics GFP,359-361.
MLA Xiao, Xi,et al."Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions".IEEE International Conference on Group IV Photonics GFP (2011):359-361.
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