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High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules
Han, Genquan; Su, Shaojian; Zhan, Chunlei; Zhou, Qian; Yang, Yue; Wang, Lanxiang; Guo, Pengfei; Wei, Wang; Wong, Choun Pei; Shen, Ze Xiang; Cheng, Buwen; Yeo, Yee-Chia; Han, G.
2011
Source PublicationTechnical Digest- International Electron Devices Meeting, IEDM
ISSN01631918
Pages16.7.1-16.7.3
AbstractWe report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a180°C GeSn MBE growth, sub-370°C Si2H6 surface passivation and gate stack process for GeSn, and an implantless metallic NiGeSn S/D formed at350°C. A hole mobility of430 cm2/Vs is obtained for GeSn pMOSFETs, which is66% higher than that of the Ge control pMOSFETs. GeSn pMOSFETs show a64% lower S/D resistance as compared to the Ge control devices.?2011 IEEE.
metadata_83集成光电子学国家重点实验室
KeywordElectron Devices Germanium Tin
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2012-06-13
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22942
Collection集成光电子学国家重点实验室
Corresponding AuthorHan, G.
Recommended Citation
GB/T 7714
Han, Genquan,Su, Shaojian,Zhan, Chunlei,et al. High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules[J]. Technical Digest- International Electron Devices Meeting, IEDM,2011:16.7.1-16.7.3.
APA Han, Genquan.,Su, Shaojian.,Zhan, Chunlei.,Zhou, Qian.,Yang, Yue.,...&Han, G..(2011).High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules.Technical Digest- International Electron Devices Meeting, IEDM,16.7.1-16.7.3.
MLA Han, Genquan,et al."High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules".Technical Digest- International Electron Devices Meeting, IEDM (2011):16.7.1-16.7.3.
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