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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition
Le LC (Le Ling-Cong); Zhao DG (Zhao De-Gang); Wu LL (Wu Liang-Liang); Deng Y (Deng Yi); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Zhang BS (Zhang Bao-Shun); Yang H (Yang Hui)
2011
Source PublicationCHINESE PHYSICS B
Volume20Issue:12Pages:127306
Subject Area光电子学
Date Available2012-02-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22931
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Le LC ,Zhao DG ,Wu LL ,et al. The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition[J]. CHINESE PHYSICS B,2011,20(12):127306.
APA Le LC .,Zhao DG .,Wu LL .,Deng Y .,Jiang DS .,...&Yang H .(2011).The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition.CHINESE PHYSICS B,20(12),127306.
MLA Le LC ,et al."The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition".CHINESE PHYSICS B 20.12(2011):127306.
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