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Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition
Hu WX (Hu Wei-Xuan); Cheng BW (Cheng Bu-Wen); Xue CL (Xue Chun-Lai); Su SJ (Su Shao-Jian); Wang QM (Wang Qi-Ming)
2011
Source PublicationCHINESE PHYSICS B
Volume20Issue:12Pages:126801
Subject Area光电子学
Date Available2012-02-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22930
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Hu WX ,Cheng BW ,Xue CL ,et al. Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition[J]. CHINESE PHYSICS B,2011,20(12):126801.
APA Hu WX ,Cheng BW ,Xue CL ,Su SJ ,&Wang QM .(2011).Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition.CHINESE PHYSICS B,20(12),126801.
MLA Hu WX ,et al."Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition".CHINESE PHYSICS B 20.12(2011):126801.
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