| Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition | |
| Hu WX (Hu Wei-Xuan); Cheng BW (Cheng Bu-Wen); Xue CL (Xue Chun-Lai); Su SJ (Su Shao-Jian); Wang QM (Wang Qi-Ming) | |
| 2011 | |
| Source Publication | CHINESE PHYSICS B
 |
| Volume | 20Issue:12Pages:126801 |
| Subject Area | 光电子学 |
| Date Available | 2012-02-22 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22930 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Hu WX ,Cheng BW ,Xue CL ,et al. Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition[J]. CHINESE PHYSICS B,2011,20(12):126801. |
| APA | Hu WX ,Cheng BW ,Xue CL ,Su SJ ,&Wang QM .(2011).Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition.CHINESE PHYSICS B,20(12),126801. |
| MLA | Hu WX ,et al."Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition".CHINESE PHYSICS B 20.12(2011):126801. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Formation of rippled（240KB） | 限制开放 | License | Application Full Text | |||
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