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Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes
Zhang Y (Zhang Yang); Guan M (Guan Min); Liu XF (Liu Xingfang); Zeng YP (Zeng Yiping)
2011
Source PublicationNANOSCALE RESEARCH LETTERS
Volume6Issue:6Pages:603
Subject Area半导体材料
Date Available2012-02-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22911
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
Zhang Y ,Guan M ,Liu XF ,et al. Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes[J]. NANOSCALE RESEARCH LETTERS,2011,6(6):603.
APA Zhang Y ,Guan M ,Liu XF ,&Zeng YP .(2011).Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes.NANOSCALE RESEARCH LETTERS,6(6),603.
MLA Zhang Y ,et al."Dependence of the electrical and optical properties on growth interruption in AlAs/In(0.53)Ga(0.47)As/InAs resonant tunneling diodes".NANOSCALE RESEARCH LETTERS 6.6(2011):603.
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