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A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure
Liu GP (Liu Guipeng); Wu J (Wu Ju); Lu YW (Lu Yanwu); Zhang BA (Zhang Biao); Li CM (Li Chengming); Sang L (Sang Ling); Song YF (Song Yafeng); Shi K (Shi Kai); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo)
2011
Source PublicationIEEE TRANSACTIONS ON ELECTRON DEVICES
Volume58Issue:12Pages:4272-4275
Subject Area半导体材料
Date Available2012-02-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22910
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Liu GP ,Wu J ,Lu YW ,et al. A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2011,58(12):4272-4275.
APA Liu GP .,Wu J .,Lu YW .,Zhang BA .,Li CM .,...&Wang ZG .(2011).A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure.IEEE TRANSACTIONS ON ELECTRON DEVICES,58(12),4272-4275.
MLA Liu GP ,et al."A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure".IEEE TRANSACTIONS ON ELECTRON DEVICES 58.12(2011):4272-4275.
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