SEMI OpenIR  > 中科院半导体材料科学重点实验室
An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth
Shao YB (Shao Yong-Bo); Zhao LJ (Zhao Ling-Juan); Yu HY (Yu Hong-Yan); Qiu JF (Qiu Ji-Fang); Qiu YP (Qiu Ying-Ping); Pan JQ (Pan Jiao-Qing); Wang BJ (Wang Bao-Jun); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei)
2011
Source PublicationCHINESE PHYSICS LETTERS
Volume28Issue:11Pages:114207
Subject Area半导体材料
Date Available2012-02-21
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22899
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Shao YB ,Zhao LJ ,Yu HY ,et al. An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth[J]. CHINESE PHYSICS LETTERS,2011,28(11):114207.
APA Shao YB .,Zhao LJ .,Yu HY .,Qiu JF .,Qiu YP .,...&Wang W .(2011).An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth.CHINESE PHYSICS LETTERS,28(11),114207.
MLA Shao YB ,et al."An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth".CHINESE PHYSICS LETTERS 28.11(2011):114207.
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