An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth | |
Shao YB (Shao Yong-Bo); Zhao LJ (Zhao Ling-Juan); Yu HY (Yu Hong-Yan); Qiu JF (Qiu Ji-Fang); Qiu YP (Qiu Ying-Ping); Pan JQ (Pan Jiao-Qing); Wang BJ (Wang Bao-Jun); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) | |
2011 | |
Source Publication | CHINESE PHYSICS LETTERS
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Volume | 28Issue:11Pages:114207 |
Subject Area | 半导体材料 |
Date Available | 2012-02-21 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/22899 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Shao YB ,Zhao LJ ,Yu HY ,et al. An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth[J]. CHINESE PHYSICS LETTERS,2011,28(11):114207. |
APA | Shao YB .,Zhao LJ .,Yu HY .,Qiu JF .,Qiu YP .,...&Wang W .(2011).An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth.CHINESE PHYSICS LETTERS,28(11),114207. |
MLA | Shao YB ,et al."An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth".CHINESE PHYSICS LETTERS 28.11(2011):114207. |
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An InP-Based Dual-De(524KB) | 限制开放 | License | Application Full Text |
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