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Electronic properties investigation of silicon supersaturated with tellurium
Li XY (Li Xinyi); Han PD (Han Peide); Gao LP (Gao Lipeng); Mao X (Mao Xue); Hu SX (Hu Shaoxu)
2011
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume105Issue:4Pages:1021-1024
Subject Area光电子学
Date Available2012-02-21
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22892
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Li XY ,Han PD ,Gao LP ,et al. Electronic properties investigation of silicon supersaturated with tellurium[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,105(4):1021-1024.
APA Li XY ,Han PD ,Gao LP ,Mao X ,&Hu SX .(2011).Electronic properties investigation of silicon supersaturated with tellurium.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,105(4),1021-1024.
MLA Li XY ,et al."Electronic properties investigation of silicon supersaturated with tellurium".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 105.4(2011):1021-1024.
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