SEMI OpenIR  > 中科院半导体材料科学重点实验室
Low temperature characteristics of AlGaN/GaN high electron mobility transistors
Lin DF (Lin D. F.); Wang XL (Wang X. L.); Xiao HL (Xiao H. L.); Wang CM (Wang C. M.); Qiang LJ (Qiang L. J.); Feng C (Feng C.); Chen H (Chen H.); Hou QF (Hou Q. F.); Deng QW (Deng Q. W.); Bi Y (Bi Y.); Kang H (Kang H.)
2011
Source PublicationEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
Volume56Issue:1Pages:10101
Subject Area半导体材料
Date Available2012-02-21
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22884
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lin DF ,Wang XL ,Xiao HL ,et al. Low temperature characteristics of AlGaN/GaN high electron mobility transistors[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,56(1):10101.
APA Lin DF .,Wang XL .,Xiao HL .,Wang CM .,Qiang LJ .,...&Kang H .(2011).Low temperature characteristics of AlGaN/GaN high electron mobility transistors.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,56(1),10101.
MLA Lin DF ,et al."Low temperature characteristics of AlGaN/GaN high electron mobility transistors".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 56.1(2011):10101.
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