| 25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions | |
| Xiao X(肖希); Xu H(徐浩); Li XY(李显尧); Hu YT(胡应涛); Xiong K(熊康); Li ZY(李智勇); Chu T(储涛); Yu YD(俞育德); Yu JZ(余金中) | |
| 2012-01 | |
| Source Publication | Optics Express
 |
| Volume | 3Issue:20Pages:2507-2515 |
| Abstract | A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal–oxide–semiconductor processes and provides low VπLπs of 0.68 V·cm to 1.64 V·cm with a moderate doping concentration of 2 × 1017 cm-3. The measured modulation efficiency decreases by only 12.4% under ± 150 nm alignment errors. 25 Gbit/s non-return-zero modulation with a 4.5 dB extinction ratio is experimentally realized at a peak-to-peak driving voltage of 2 V, demonstrating the excellent performance of the novel doping profile. |
| metadata_24 | 其它 |
| Keyword | Silicon Photonics |
| Subject Area | 半导体器件 ; 光电子学 |
| Indexed By | SCI |
| Date Available | 2012-02-09 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22876 |
| Collection | 光电子研究发展中心 |
| Corresponding Author | Xiao X(肖希) |
| Recommended Citation GB/T 7714 | Xiao X,Xu H,Li XY,et al. 25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions[J]. Optics Express,2012,3(20):2507-2515. |
| APA | Xiao X.,Xu H.,Li XY.,Hu YT.,Xiong K.,...&Yu JZ.(2012).25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.Optics Express,3(20),2507-2515. |
| MLA | Xiao X,et al."25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions".Optics Express 3.20(2012):2507-2515. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 25 Gbps silicon micr（2053KB） | 限制开放 | License | Application Full Text | |||
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