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Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix
Rui YJ; Li SX; Xu J; Song C; Jiang XF; Li W; Chen KJ; Wang QM; Zuo YH; Rui, YJ (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China, junxu@nju.edu.cn
2011
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume110Issue:6Pages:64322
AbstractSi quantum dots (QDs) were formed by thermal annealing the hydrogenated amorphous silicon carbide films (a-SiC(x):H) with different C/Si ratio x, which were controlled by using a different gas ratio R of methane to silane during the deposition process. By adjusting x and post annealing temperature, the QD size can be changed from 1.4 to 4.2 nm accordingly, which was verified by the Raman spectra and transmission electron microscopy images. Size-dependent electroluminescence (EL) was observed, and the EL intensity was higher for the sample containing small-sized Si QDs due to the quantum confinement effect (QCE). The EL peak energy as a function of the Si QDs size was in good agreement with a modified effective mass approximation (EMA) model. The calculated finite barrier potential of the Si QDs embedded in SiC matrix is 0.4 and 0.8 eV for conduction and valence band, respectively. Moreover, the current-voltage properties and the linear relationship between the integrated EL intensity and injection current indicate that the carrier transport is dominated by Fowler-Nordheim tunneling and the EL mechanism is originated from the bipolar recombination of electron-hole pairs at Si QDs. Our results demonstrate Si QDs embedded in amorphous SiC matrix has the potential application in Si-based light emitting devices and the third-generation solar cells. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641989]
metadata_83集成光电子学国家重点实验室
KeywordSilicon Nanocrystallites Luminescence Confinement Photoluminescence Microcrystals Nanoclusters Superlattice Multilayers Electrons States
Subject Area光电子学
Funding Organization973 project[2007CB613401]; NSF of China[10874070, 61036001]; NSF of Jiangsu Province[BK2010010]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22865
Collection集成光电子学国家重点实验室
Corresponding AuthorRui, YJ (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China, junxu@nju.edu.cn
Recommended Citation
GB/T 7714
Rui YJ,Li SX,Xu J,et al. Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix[J]. JOURNAL OF APPLIED PHYSICS,2011,110(6):64322.
APA Rui YJ.,Li SX.,Xu J.,Song C.,Jiang XF.,...&Rui, YJ .(2011).Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix.JOURNAL OF APPLIED PHYSICS,110(6),64322.
MLA Rui YJ,et al."Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix".JOURNAL OF APPLIED PHYSICS 110.6(2011):64322.
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