| Metal electrode influence on the wet selective etching of GaAs/AlGaAs | |
| Wang J; Han Q; Yang XH; Wang XP; Ni HQ; He JF; Wang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China, hanqin@semi.ac.cn | |
| 2011 | |
| Source Publication | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| ISSN | 1071-1023 |
| Volume | 29Issue:4Pages:41208 |
| Abstract | Metal electrodes were found to influence the wet selective etching of GaAs in a citric acid/hydrogen peroxide solution. The authors found that metal films such as a Cr/Au or Ti/Au alloy deposited on a semiconductor surface can mostly prevent the etching of GaAs. The GaAs sacrificial material that was exposed to the selective etchant near the metal electrode was not removed at all. Contrast experiments show that it can be removed selectively if no metal is present on the surface or if the GaAs is located far enough from the metal. Electrochemical analyses were undertaken to determine the passivation mechanism. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610969] |
| metadata_83 | 集成光电子学国家重点实验室 |
| Keyword | Hydrogen-peroxide Solutions Iii-v Semiconductors Pseudomorphic Modfets Gaas Fabrication Transistor Algaas |
| Subject Area | 光电子学 |
| Funding Organization | National Natural Foundation of China[60876039]; Hi-Tech Research and Development Program of China (863 Program)[2007AA03Z421] |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2012-02-06 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/22847 |
| Collection | 集成光电子学国家重点实验室 |
| Corresponding Author | Wang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China, hanqin@semi.ac.cn |
| Recommended Citation GB/T 7714 | Wang J,Han Q,Yang XH,et al. Metal electrode influence on the wet selective etching of GaAs/AlGaAs[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2011,29(4):41208. |
| APA | Wang J.,Han Q.,Yang XH.,Wang XP.,Ni HQ.,...&Wang, J .(2011).Metal electrode influence on the wet selective etching of GaAs/AlGaAs.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,29(4),41208. |
| MLA | Wang J,et al."Metal electrode influence on the wet selective etching of GaAs/AlGaAs".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 29.4(2011):41208. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Metal electrode infl（400KB） | 限制开放 | -- | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment