SEMI OpenIR  > 集成光电子学国家重点实验室
Metal electrode influence on the wet selective etching of GaAs/AlGaAs
Wang J; Han Q; Yang XH; Wang XP; Ni HQ; He JF; Wang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China, hanqin@semi.ac.cn
2011
Source PublicationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN1071-1023
Volume29Issue:4Pages:41208
AbstractMetal electrodes were found to influence the wet selective etching of GaAs in a citric acid/hydrogen peroxide solution. The authors found that metal films such as a Cr/Au or Ti/Au alloy deposited on a semiconductor surface can mostly prevent the etching of GaAs. The GaAs sacrificial material that was exposed to the selective etchant near the metal electrode was not removed at all. Contrast experiments show that it can be removed selectively if no metal is present on the surface or if the GaAs is located far enough from the metal. Electrochemical analyses were undertaken to determine the passivation mechanism. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610969]
metadata_83集成光电子学国家重点实验室
KeywordHydrogen-peroxide Solutions Iii-v Semiconductors Pseudomorphic Modfets Gaas Fabrication Transistor Algaas
Subject Area光电子学
Funding OrganizationNational Natural Foundation of China[60876039]; Hi-Tech Research and Development Program of China (863 Program)[2007AA03Z421]
Indexed BySCI
Language英语
Date Available2012-02-06
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22847
Collection集成光电子学国家重点实验室
Corresponding AuthorWang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China, hanqin@semi.ac.cn
Recommended Citation
GB/T 7714
Wang J,Han Q,Yang XH,et al. Metal electrode influence on the wet selective etching of GaAs/AlGaAs[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2011,29(4):41208.
APA Wang J.,Han Q.,Yang XH.,Wang XP.,Ni HQ.,...&Wang, J .(2011).Metal electrode influence on the wet selective etching of GaAs/AlGaAs.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,29(4),41208.
MLA Wang J,et al."Metal electrode influence on the wet selective etching of GaAs/AlGaAs".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 29.4(2011):41208.
Files in This Item:
File Name/Size DocType Version Access License
Metal electrode infl(400KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Wang J]'s Articles
[Han Q]'s Articles
[Yang XH]'s Articles
Baidu academic
Similar articles in Baidu academic
[Wang J]'s Articles
[Han Q]'s Articles
[Yang XH]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wang J]'s Articles
[Han Q]'s Articles
[Yang XH]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.