A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector | |
Zhao DG; Zhang S; Jiang DS; Zhu JJ; Liu ZS; Wang H; Zhang SM; Zhang BS; Yang H; Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China, dgzhao@red.semi.ac.cn | |
2011 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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ISSN | 0021-8979 |
Volume | 110Issue:5Pages:53701 |
Abstract | The spectral responses of back-illuminated p-i-n AlGaN ultraviolet photodetector under different bias voltage are investigated. The device structure is composed of p-GaN/ p-Al(0.3)Ga(0.7)N/i-Al(0.3) Ga(0.7)N/n-Al(0.6)Ga(0.4)N and Ohmic contacts, where the p-GaN layer is very thin. There are two peaks in the spectral response of photocurrent located at 350 and 290 nm, respectively. It is found that in some devices the relative intensity and phase of these two peaks may change strongly with applied forward bias. A detailed analysis suggests that the possible Schottky-type-like behavior of metal and p-GaN contact and an unsatisfactory doping of p-GaN and p-AlGaN are responsible for the abnormal phenomenon. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3629987] |
metadata_83 | 集成光电子学国家重点实验室 |
Keyword | Surface Photovoltage Spectroscopy Iii-nitrides |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2012-02-06 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/22829 |
Collection | 集成光电子学国家重点实验室 |
Corresponding Author | Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China, dgzhao@red.semi.ac.cn |
Recommended Citation GB/T 7714 | Zhao DG,Zhang S,Jiang DS,et al. A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector[J]. JOURNAL OF APPLIED PHYSICS,2011,110(5):53701. |
APA | Zhao DG.,Zhang S.,Jiang DS.,Zhu JJ.,Liu ZS.,...&Zhao, DG .(2011).A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector.JOURNAL OF APPLIED PHYSICS,110(5),53701. |
MLA | Zhao DG,et al."A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector".JOURNAL OF APPLIED PHYSICS 110.5(2011):53701. |
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